AlGaN/GaN HFET'S by Lester F. Eastman Cornell University, Electrical and Computer Engineering 425 Phillips Hall Ithaca, NY 14853-5401, USA Tel: (6-07) 255-4369 FAX: (6-07) 255-4742 e-mail: lfe-iiiv.tn.cornell.edu ABSTRACT The strong spontaneous and piezoelectric polarizations in pseudomorphic AlGaN/GaN on SiC substrates are used to induce 2DEG sheet density of > 1 x 1013/cm2 with mobility up to 1,

Correlation between Chemical and Electrical Properties of n-InGaP Surfaces Grown by MOVPE Tamotsu Hashizume and Toshiya Saitoh* Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo, 060-8628, Japan Tel: +81-11-706-6873, Fax: +81-11-716-6004, hashi-rciqe.hokudai.ac.jp *Hitachi Cable Ltd., Hitachi, 319-14, Japan ABSTRACT Correlation between chemical and electrical

Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer K. S. Stevens, R. E. Welser, P. M. Deluca, B. E. Landini, C. R. Lutz, and T. L. Wolfsdorf-Brenner Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780, USA Phone: (508) 824-6696, Fax (508) 824-6418, E-mail: kstevens-kopin.com ABSTRACT GaInNAs base layers are enabling performance enhancements over standard GaAs-based HBT

ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF BULK GaAs AFTER SURFACE GETTERING A.T.Gorelenok, V.F.Andrievskii, A.V.Kamanin *, S.I.Kohanovskii, and N.M.Shmidt Ioffe Physico-Technical Institute, St.Petersburg 194021, Russia * E-mail: kamanin-ffm.ioffe.rssi.ru Institute for Electronics, Minsk 220090, Belarus ABSTRACT The successful results on surface gettering of background impurities and defe

Etching behaviour of GaAs with chlorine chemically assisted ion beam etching depending on the surface temperature J. Dienelt, K. Zimmer, B. Rauschenbach Institut für Oberflächenmodifizierung e.V. (IOM), D-04318 Leipzig, Germany phone: ++49 (0)341 235 2440 fax: ++49 (0)341 235 2595 email: jdienelt-rz.uni-leipzig.de ABSTRACT The chemically assisted ion beam etching (CAIBE) of GaAs as well as the spu

EFFICIENT DEVELOPMENT OF HIGHLY LINEAR MMIC POWER AMPLIFIERS M. Bignamini, G. Favre, A. Meazza, M. Pagani, F. Palomba, and G. Sivverini ERICSSON LAB ITALY Via Cadorna, 73 - 20090 Vimodrone (MI) ­ Italy. Phone: +39 02 26598628; Fax: +39 02 26598583; e-mail: maurizio.pagani-eri.ericsson.se ABSTRACT Highly linear power amplifiers are key components of high capacity radio transmitters. This paper des

Optimum design of a new predistortion scheme for high linearity K-band MMIC power amplifiers P. Bianco1 , S. Donati Guerrieri1 , G. Ghione1 , M. Pirola1 , C.U. Naldi1 , C. Florian2 , G. Vannini3 , A. Santarelli2 , F. Filicori2 , L. Manfredi4 Dipartimento di Elettronica - Politecnico di Torino, C.so Duca degli Abruzzi 24 - Torino, Italy 2 DEIS - Università di Bologna, Viale Risorgimento 2 - 40136 B

PHASE TUNING APPROACH FOR POLYHARMONIC POWER AMPLIFIERS Anna N. Rudiakova *, Vladimir G. Krizhanovski *, Marian K. Kazimierczuk \ * Donetsk National University, Radio Physics Department, ul. Universitetskaya 24, Donetsk 83055, Ukraine, phone: +380 622 91 92 61, e-mail: radio-dongu.donetsk.ua :ULJKW 6WDWH 8QLYHUVLW\ 'HSDUWPHQW RI (OHFWULFDO (QJLQHHULQJ 'D\WRQ 2+ 86$ E-mail: mkazim-cs.wright.edu,

A Compact, Semi-Physically Based Model Predicts Accurate Power And Linearity of Power InGaP HBTs C.-J. Wei, J. Gering, S. Sprinkle, Y. A. Tkachenko and D. Bartle ALPHA INDUSTRIES INC, 20 SYLVAN ROAD, WOBURN, MA 01801 ABSTRACT A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity simulations. In addition to self-heating, the model takes into account t

C-band 10-Watt HBT High-power Amplifier with 50% PAE A.P. de Hek, A. de Boer and T. Svensson * TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG The Hague, The Netherlands Phone: 31.70.374.04.09, Fax: 31.70.374.06.54, Email: deHek-fel.tno.nl * Ericsson Microwave Systems AB, SE-431 84 Mölndal, Sweden. ABSTRACT The design and measurement of a C-band HBT high-power amplifier (HPA) is