0.12um Gate Length In0.52AL0.48As/In0.53Ga0.47As HEMTs on Transferred Substrate
S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar, J. Mateos
0.12 µm GATE LENGTH In0.52 Al0.48 As/In0.53 Ga0.47 As HEMTs ON TRANSFERRED SUBSTRATE S. Bollaert(1), X. Wallart(1), S. Lepilliet(1), A. Cappy(1), E. Jalaguier(2), S. Pocas(2), B. Aspar(2), J. Mateos(3) IEMN-DHS Cité Scientifique, Avenue Poincaré, BP 69 59652 Villeneuve d'Ascq Cedex, France sylvain.bollaert-iemn.univ-lille1.fr CEA-LETI Département des Technologies Silicium 17, rue des Martyrs, 3805