A NOVEL APPROACH FOR HIGHLY LINEAR AUTOMATIC GAIN CONTROL OF A HEMT SMALL-SIGNAL AMPLIFIER. Emigdio Malaver , Jos´ Angel Garc´ e ia , Antonio Taz´n o , Angel Mediavilla Universidad de Los Andes, Departamento de Electr´nica y Comunicaciones, o Av. T´lio Febres Cordero, M´rida 5101, Venezuela, emalaver-ing.ula.ve u e TTI Norte S.A, Av Los Castros No 1, Santander 39005, Spain, email: jangel-ieee.org

A Novel Method for the Higher Order Components Extraction of the Channel Current in GaAs MESFET Youngsik Kim , JiYoun Kim , Sungwoo Kim and Bumman Kim School of CSEE, Handong University Namsongri Heunghae, Pohang city, Korea Dept. of EE Eng.Pohang University of Science and Technology E-mail: young-handong.edu ABSTRACT We propose a new simple and accurate method for the higher order Taylor coeffici

New Trends in Characterization and Modeling of High Power Devices Ph. Bouysse, D. Barataud*, R. Sommet, J.P. Teyssier, J.M. Nébus*, R. Quéré IRCOM, CNRS, Université de Limoges, IUT GEII, 7 rue Jules Vallès, 19100 Brive, France * IRCOM, CNRS, Université de Limoges, 123 av. Albert Thomas, 87060 Limoges, France Abstract In this paper, we present some non exhaustive measurement techniques used for ch

THEORETICAL AND EXPERIMENTAL ASSESSMENT OF THE NON-LINEAR SCATTERING FUNCTIONS FOR THE CAD OF NON-LINEAR MICROWAVE CIRCUITS D. Schreurs*, J. Verspecht+, G. Acciari^, P. Colantonio^, F. Giannini^: E. Limiti^: and G. Leuzzi§ *ESAT-TELEMIC, Katholieke Universiteit Leuven, Kard. Mercierlaan 94, B-3001 Heverlee, Belgium dominique.schreurs-esat.kuleuven.ac.be + Agilent Technologies, NMDG, VUB-ELEC,

A WIDEBAND AUTOMATED MEASUREMENT SYSTEM FOR ON-WAFER NOISE PARAMETER MEASUREMENTS AT 50-75 GHZ M. Kantanen1, M. Lahdes1, J. Tuovinen1, T. Vähä-Heikkilä1, P. Kangaslahti2, P. Jukkala2, N. Hughes2 1 MilliLab, VTT Information Technology, P.O. Box 1202, FIN-02044 VTT, Finland Tel.: +358 9 456 6501 Fax: +358 9 456 7013 Email: mikko.kantanen-vtt.fi 2 Ylinen Electronics Ltd., Teollisuustie 9 A, FIN-0270

HIGH PERFORMANCE TEST FIXTURE FOR 10-PORT MMIC's CHARACTERISATION Stanimir Kamenopolsky * and Plamen Dankov * Sky Gate BG, Antenna&RF Design Dept, 2A Mogilata Str., 1700-Sofia, Bulgaria Tel.: 359-2-962 56 65, Fax: 359-2-962 13 15, E-mail: kamenopolsky_s-skygate.bg Sofia University, Faculty of Physics, 5, J. Bourchier Blvd, 1164-Sofia, Bulgaria, Tel.: 359-2-6256 806, E-mail: dankov-phys.uni-sofia

LOW FREQUENCY NOISE CONVERSION IN FETs UNDER NONLINEAR OPERATION F. DANNEVILLE, B. TAMEN, A. CAPPY J-B JURAVER*, O. LLOPIS*, J. GRAFFEUIL* IEMN, UMR CNRS 8520, Avenue Poincaré, BP 69, 59652 Villeneuve d'Ascq, France *LAAS-CNRS, 7 Av. du Colonel Roche, 31077 Toulouse, France francois.danneville-iemn.univ-lille1.fr ABSTRACT Based upon the active line concept, the conversion mechanisms of microscopi

Papers By Session Session Titles q Opening Session q GAAS 1 - Materials and Technology 1 q GAAS 2 - Device Modelling 1 q GAAS 3 - Focussed Session: Power Devices q GAAS 4 - MMIC Mixers q GAAS 5 - Industrial Applications of MMICs q GAAS 6 - Materials and Technology 2 Electroq GAAS 7 - Electro-Thermal Device Characterisation q GAAS 8 - Focussed Session: Power Amplifiers Menu Click on a title to vi

Conference Information Conference Proceedings Tuesday 25th September 2001 Organised by on behalf of The European Microwave Association Menu Conference Information Introduction to the GAAS 2001 As part of the prestigious 4th European Microwave Week - 24 - 28 September, 2001, the venue for the 9th European Gallium Arsenide and other semiconductors Application Symposium, GAAS2001, will be the ne

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