A 24.6-GHz MMIC HBT Triple-Push Oscillator Yu-Lung Tang and Huei Wang Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, 10617, ROC E-mail: hueiwang-ew.ee.ntu.edu.tw ABSTRACT A triple-push oscillator has been implemented using MMIC approach. This 24.6-GHz MMIC HBT triple-push oscillator was fabricated using InGaP/GaAs HB

A NEW TECHNIQUE FOR THE TRANSIENT SIMULATION OF TRANSMISSION LINES INCLUSIVE OF SKIN EFFECT M. Condon School of Electronic Engineering Dublin City University Glasnevin Dublin 9 Ireland Phone: +353 1 7005405 Fax: +353 1 7005508 Email: marissa.condon-dcu.ie ABSTRACT A new approach is presented for the transient simulation of lossy transmission lines in high-speed circuits. The approach is based on

THE PRINCIPLE OF SYMMETRY OF KINETIC COEFFICIENTS FOR MEDIA WITH FERRITE INCLUSIONS AND ITS APPLICATION TO NONRECIPROCAL BI-ANISOTROPIC COMPOSITES S.V. Zagriadski1 and S.A. Tretyakov2 Science Technology Center No. 407, Department of Electrical and Computer Engineering Hanyang University, Haengdang-dong 17, Seongdang-Ku, Seoul, 133-791, Korea Fax: +82-2-571-4656, E-mail: zagriadski-ieee.org 2 Radio

60GHZ-BAND FLIP-CHIP MMIC MODULES FOR IEEE1394 WIRELESS ADAPTERS K. Maruhashi, M. Ito, K. Ikuina, T. Hashiguchi, J. Matsuda, W. Domon, S. Iwanaga*, N. Takahashi**, T. Ishihara**, Y. Yoshida**, I. Izumi** and K. Ohata NEC Corporation, 2-9-1 Seiran, Otsu, Shiga 520-0833, JAPAN, e-mail:k-maruhashi-bl.jp.nec.com *NEC Kansai, Ltd., 2-9-1 Seiran, Otsu, Shiga 520-0833, JAPAN **NEC Engineering, Ltd., 1753

Influence of 0-level packaging on the microwave performance of RF-MEMS devices A. Jourdain, S. Brebels, W. De Raedt and H. A. C. Tilmans IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium Tel: +32 16 288 220, Fax: +32 16 281 501, E-mail: jourdain-imec.be Abstract RF-MEMS devices (Radio Frequency-MicroElectroMechanical Systems) are made of moveable and fragile structures (membranes, beams, cantilevers

A NEW MESH REDUCTION TECHNOLOGY FOR THE METHOD OF MOMENTS MODELLING OF PLANAR RF AND MICROWAVE INTERCONNECTS Jeannick Sercu(*), Luc Knockaert(**), Daniel De Zutter(**) (*) Agilent Technologies EEsof EDA, Lammerstraat 20, 9000 Ghent, Belgium (**) Department of Information Technology, Ghent University, Belgium ABSTRACT This paper describes a new mesh reduction technology that significantly increas

DESIGN OF NOVEL MULTILAYER MICROWAVE COUPLED-LINE STRUCTURES USING THICK- FILM TECHNOLOGY Zhengrong Tian, Charles Free, Peter Barnwell *, James Wood *, Colin Aitchison Middlesex University, Bounds Green Road, London N11 2NQ, UK, E-mail: T.Zhengrong-mdx.ac.uk * Heraeus Circuit Materials Division, West Conschohoken, PA19246, USA, E-mail: PBarnwell-4cmd.com School of Electronic Engineering, Univers

Microwave glob top for space applications : A route to non hermiticity P. MONFRAIX(1), L. ALBO(1), C. DREVON(1), J.L. CAZAUX(1), J.L. ROUX(2) : ALCATEL SPACE INDUSTRIES, 26 avenue J.F. Champollion 31037 TOULOUSE, FRANCE Phone : +33 5 34 35 60 70, Fax : +33 5 34 35 69 47 E-mail : Philippe.Monfraix-space.alcatel.fr (2) : CNES, 31000 TOULOUSE, France (1) Abstract This paper presents the electrical d

Measurement and Simulation of Microwave Noise Transient of InP/InGaAs DHBT with Polyimide Passivattion Yong Zhong Xiong*, Geok-Ing Ng, Hong Wang, Jeffrey S. Fu, and Radhakrishnan K Microelectronics Centre, School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798 *Corresponding author, Tel: (65) 7904234, Fax: (65) 7933318, e-mail: eyzxiong-ntu.edu.sg ABST

DYNAMIC LARGE-SIGNAL I-V ANALYSIS AND NON-LINEAR MODELLING OF ALGAN/GAN HEMTS E. Chigaeva*, N. Wieser*, W. Walthes*, M. Grözing*, and M. Berroth* H. Roll**, O. Breitschädel**, J. Off**, B. Kuhn**, F. Scholz**, and H. Schweizer** * Institute of Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, D-70569 Stuttgart, Germany, Tel.: +49 711 685 7912, Fax: +49