Performance Comparison of HBTs and Quasi E-mode PHEMTs for Single Supply High Efficiency Power Amplifiers Y. Tkachenko, C. Wei, S. Sprinkle, J. Gering, J. Lee, T. Kao, Y. Zhao W. Ho, M. Sun and D. Bartle Alpha Industries. Inc., 20 Sylvan Rd, Woburn, MA 01801 and 1230 Bordeaux Dr, Sunnyvale, CA 94089 Tel: 781-935-5150; E-mail: gtkachenko-alphaind.com Abstract ­ Performance of an HBT and a Quasi Enh

ANALYSIS OF HEMT TIME-EVOLUTION CHARACTERISTICS Anthony E. Parker and James G. Rathmell Macquarie University, Sydney AUSTRALIA 2109, tonyp-ieee.org The University of Sydney, AUSTRALIA 2006, jimr-ee.usyd.edu.au ABSTRACT A novel transient measurement of the time-evolution of drain characteristics is analyzed to separate thermal and trapping dispersions. The procedure extracts isothermal character

A 2GHz Delta-Sigma Modulator implemented in InP HBT technology Guillaume Hincelin CSIRO Telecommunications and Industrial Physics, P O Box 76, Epping, NSW 1710 Australia Tel: (61) 2 9372 4378 Fax: (61) 2 9372 4488 Guillaume.Hincelin-tip.csiro.au ABSTRACT A first-order Delta-Sigma () modulator has been fabricated using a 70GHz (fT) AlInAs/GaInAs-InP HBT technology. At a sampling rate of 2GHz, it c

DC to 11GHz Fully Integrated GaAs Up Conversion Mixer R.H.Witvers*, J.G. Bij de Vaate# ASTRON P.O. Box 2, 7990 AA Dwingeloo, The Netherlands Phone: +31-521-595100 Fax: +31-521-597332 * E-mail: Witvers-astron.nl # E-mail: Vaate-astron.nl 1. ABSTRACT. This paper describes the design and realization of a wide band single balanced fully integrated up-conversion mixer. The mixer has a RF bandwidth fro

UNCONDITIONAL STABILIZATION OF CS and CG MESFET TRANSISTOR Hany F. Hammad , Alois P. Freundorfer, and Yahia M.M. Antar Electrical and Computer Engineering Department, Queen's University, Kingston Ontario, Canada, hammadh-ee.queensu.ca,freund-post.queensu.ca Electrical and Computer Engineering Department, Royal Military College of Canada, antar-y-rmc.ca ABSTRACT Feedback is used to achieve multi-

Quantum MMIC (QMMIC) VCO's for Wireless Applications Vijay Nair, Mandar R. Deshpande, Jonathan Lewis, Nada El-Zein, Scott Ageno, Gary Kramer, Marilyn Kyler, Mike Hupp and Herb Goronkin Physical Sciences Research Laboratories Motorola Labs., Motorola Inc., 7700 S. River Parkway, M/D ML34, Tempe, AZ 85284, USA Email: vijay.nair-motorola.com, Phone 480-755-5590, Fax: 480-755-6065 ABSTRACT The monoli

Packaged Millimeter Wave Thermal MEMS Switches P. Blondy*,D. Mercier*, D. Cros*, P. Guillon* P. Rey**, P. Charvet**, B. Diem** C. Zanchi***, L. Lapierre***, J. Sombrin***, J.B. Quoirin**** Tel: 05 55 45 77 31 ­ Fax: 05 55 45 76 49 ­ email: pblondy-ircom.unilim.fr * IRCOM, Faculté des Sciences, 123 avenue A. Thomas, 87000 LIMOGES FRANCE ** CEA-LETI, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9 *** CN

Bulk Silicon Micro-Machined MEM Switches For Millimeter-Wave Applications K. Grenier1,2, P. Pons1, R. Plana1,2, J. Graffeuil1,2 2 LAAS / CNRS, 7 av. du Colonel Roche, 31 077 TOULOUSE cedex 4, France Université Paul Sabatier, 118 Route de Narbonne, 31 062 Toulouse cedex 4, France By applying a DC voltage on the central conductor of the coplanar waveguide (CPW) transmission line, the bridges are at

Novel DC-Contact MEMS Shunt Switches and High-Isolation Series/Shunt Designs Jeremy B. Muldavin and Gabriel M. Rebeiz Abstract-- This paper presents a metal-to-metal contact MEMS shunt switch suitable for DC-40 GHz applications. A novel pull-down electrode is used which applies the electrostatic force at the same location as the metal-to-metal contact area. A contact resistance of 0.15 - 0.35 is

A MOS Model 9 Extension for GHz CMOS RF Circuit Design Christian Rye Iversen Siemens Mobile Phones A/S, DK-9490 Pandrup, DENMARK, Christian.Iversen-aal.siemens.dk Also with the Radio Frequency Integrated Systems and Circuits (RISC) Group, Aalborg University, DENMARK. ABSTRACT This paper presents an extension to the compact MOS model 9 that enables accurate simulation of CMOS RF circuits in the GHz