A MEASUREMENT BASED MODEL OF HEMT TAKING INTO ACCOUNT THE NON LINEAR, NON UNIFORM TRANSMISSION LINE NATURE OF THE CHANNEL AND ITS ASSOCIATED LOW FREQUENCY NOISE SOURCES A. LALOUE*, M. CAMIADE**, M. VALENZA***, J.C. VILDEUIL***, J.C. NALLATAMBY* ,M. PRIGENT*, J. OBRÉGON****, R. QUÉRÉ* IRCOM - CNRS UMR 6615- University of Limoges - IUT - 7, rue Jules Vallès - 19100 BRIVE - FRANCE E-mail : laloue-bri

FMM and NDC technology-independent finite-memory nonlinear device models: ADS implementation and large-signal validation results Alberto Costantini , Rudi Paganelli , Pier Andrea Traverso , Giorgia Zucchelli , Alberto Santarelli , Giorgio Vannini , , Fabio Filicori , Vito Antonio Monaco DEIS - University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy. CSITE/CNR - University of Bologn

A NON QUASI-STATIC NON-LINEAR P-HEMT MODEL OPERATING UP TO MILLIMETRIC FREQUENCIES Daniel Roques, Francis Brasseau, Bernard Cogo, Michel Soulard, Jean-Louis Cazaux ALCATEL SPACE INDUSTRIES, 26, Avenue J.F. Champollion, B.P. 1187 31037 Toulouse Cedex- FRANCE Tel : 33.5.34.35.58.41 - Fax : 33.5.34.35.69.47-E-mail : daniel.roques.-space.alcatel.fr ABSTRACT This paper presents a non-linear p-HEMT mode

SELF CONSISTENT MODELLING OF PHEMT DEVICES FOR MILLIMETER WAVE SMALL SIGNAL, NOISE AND POWER APPLICATIONS. D M Brookbanks Marconi Caswell Ltd, Caswell, Towcester, Northants, NN12 8EQ, UK e-mail: mike.brookbanks-gecm.com ABSTRACT Accurate simulation of PHEMT based GaAs MMIC's requires a bias dependent model that can be used in both small signal and large signal analysis and is accurate over a wide

ACCURATE MICROWAVE CHARACTERISATION OF POWER LD-MOSFETs Franco Giannini*, Fabio Graglia*, Giorgio Leuzzi+, Antonio Serino* * Dip. Ingegneria Elettronica, Università di Roma Tor Vergata, Via di Tor Vergata 110, Roma 00133, Italy + Dip. Ingegneria Elettrica, Università dell'Aquila, Monteluco di Roio, L'Aquila 67040, Italy Phone: +39.06.7259.7351 - Fax: +39.06.7259.7353 - E-mail: leuzzi-ing.univaq.it

NOVEL 4-POINTS INPUT PATTERN FOR LARGE BAND NOISE MEASUREMENTS M. De Dominicis, F. Giannini, E. Limiti, G. Saggio Electronic Engineering Dept., University of Roma "Tor Vergata" - Via di Tor Vergata 110 - 00133 Roma - ITALY Tel: +(39) 06 7259 7323; Fax: +(39) 06 7259 7343; E-mail: saggio-uniroma2.it ABSTRACT Four parameters are necessary for a complete characterization of the noise behavior of a li

Industrial GaInP/GaAs Power HBT MMIC Process H. Blanck*, K. J. Riepe*, W. Doser*, P. Auxemery#, and D. Pons# * United Monolithic Semiconductors GmbH, Wilhelm-Runge-Straße 11, 89081 Ulm, Germany email: blanck-ums-ulm.de # United Monolithic Semiconductors SAS, Route Departementale 128 - BP 46 - 91401 Orsay Cedex France ABSTRACT UMS has developed an industrial power HBT process especially dedicated

DEVELOPMENT AND VERIFICATION OF A NON-LINEAR LOOK-UP TABLE MODEL FOR MOSFETS D. Schreurs, E. Vandamme , C. van Dinther ¡ K.U.Leuven, Div. ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Leuven, Belgium E-mail: dominique.schreurs-esat.kuleuven.ac.be, Fax: +32-16-321986, Phone: +32-16-321821 IMEC, Div. STDI/CMOS, Kapeldreef 75, B-3001 Leuven, Belgium Philips Semiconductors, Gerstweg 2, NL-6534

Tayloring the Breakdown Voltage in High Electron Mobility Transistor: Theoretical and Experimental Results A. Sleiman, A. Di Carlo, L. Tocca, R. Fiordiponti, and P. Lugli INFM - Dipartimento di Ingegneria Elettronica, Universitá di Roma "Tor Vergata", 110-I-00133 Rome, Italy. E-mail: ammar-venere.eln.uniroma2.it Günther Zandler Walter Schottky Institute, TU-Munich, Am Coulombwall, 85748 Garching,

Influence of recess and epilayers in the 26 ­ 40 GHz band HEMT's intermodulation F. Bue, C. Gaquière, X. Hue, B. Boudart, Y. Crosnier, J.C. De Jaeger, B. Carnez*, D. Pons* Institut d'Electronique et de Microélectronique du Nord ­ U.M.R. ­ C.N.R.S. 8520 Département Hyperfréquences et Semiconducteurs Cité scientifique ­ Avenue Poincaré ­ B.P. 69 ­ 59652 Villeneuve d'Ascq Cedex ­ France * United Mono