Design of PHEMT Diodes for MMIC Mixer Applications Thomas A. Bos, Edmar Camargo Fujitsu Compound Semiconductor, Inc. 2355 Zanker Road, San Jose, CA 95131, USA Tel: +1-408-232 9662, Fax: +1-232 9608, Email: tbos-fcsi.fujitsu.com Abstract This paper presents a simple approach for optimizing the dimensions of PHEMT diodes as well as predicting their mixer performance up to millimeter wave frequencies

Fully Physical Coupled Electro-Thermal Modelling of Transient and Steady-State Behaviour in Microwave Semiconductor Devices S. David, W. Batty, A. J. Panks, R. G. Johnson and C. M. Snowden Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK Tel. +44 113 2332060 Fax +44 113 2332032 E-mail eensd-electeng.leeds.ac.uk ABSTRACT

MODELLING OF RESPONSIVITY OF INP-PIN PHOTODIODE FOR STUDYING OPTICAL-MICROWAVE FREQUENCY CONVERSION PROCESSES1 Bogdan A. Galwas*, Jaroslaw Dawidczyk*, Aleksander Chyzh and Sergei A. Malyshev# Warsaw University of Technology, Nowowiejska 15/19, 00-665 Warsaw, Poland, Phone/fax: +48(22)8250 393, e-mail: galwas- imio.pw.edu.pl, dawidczyk-imio.pw.edu.pl # * National Academy of Sciences, 22 Lagoiski T

Gate ionization current of an Enhancement-Mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate M. Boudrissa, E. Delos, Y. Cordier, D. Théron and J.C. De Jaeger. e-mail : mustafa.boudrissa-iemn.univ-lille1.fr Institut d'Electronique et de Microelectronique du Nord (IEMN) Département Hyperfréquence et Semiconducteurs Université des Sciences et Technologies de Lille 59652 Villeneuve

KA-BAND EQUIPMENT ASSEMBLY FOR MULTIMEDIA SATELLITE PAYLOADS PATRICE ULIAN, HERVÉ LEVEQUE, AGNÈS RECLY, JEAN-CHRISTOPHE CAYROU, BERNARD COGO, JEAN-LOUIS CAZAUX e-mail : patrice.ulian-space.alcatel.fr ALCATEL SPACE INDUSTRIES, 26 Avenue J.F.Champollion, 31037 TOULOUSE, FRANCE Tel: 33 (0)5 34 35 57 60 Fax: 33 (0)5 34 35 69 47 ABSTRACT This paper describes new equipment generation developed in Alcat

A BROADBAND MICROWAVE AMPLIFIER USING MULTILAYER TECHNOLOGY G. DUCHAMP, S. GAUFFRE, L. CASADEBAIG and J. PISTRE Laboratoire IXL / ENSERB -UMR CNRS 5818 ­ Université Bordeaux 1 ­ 351 Cours de la Libération ­ 33405 TALENCE Cedex - FRANCE Telephone: (33) 5 - 56 84 27 68, FAX: (33) 5 - 56 37 15 45, E-mail: duchamp-ixl.u-bordeaux.fr ABSTRACT In this paper, we propose a new broadband microwave amplifier

A NOVEL TOPOLOGY FOR A HEMT NEGATIVE CURRENT MIRROR F. Centurelli*, R. Luzzi*, M. Olivieri*, S. Pennisi+, A. Trifiletti* *Dipartimento di Ingegneria Elettronica, Università di Roma "La Sapienza" Via Eudossiana 18, I - 00184, Roma, ITALY; phone: +39-6-44585679, fax: +39-6-44585787 e-mail: trifiletti-die.ing.uniroma1.it + Dipartimento Elettrico, Elettronico e Sistemistico, Università di Catania V.le

ALGAAS HBV PERFORMANCE IN FREQUENCY TRIPLING AT 255 GHZ M.Saglam1, M.Bozzi2, C.Domoto3, A.Megej1, M.Rodriguez­Girones1, L.Perregrini2, H. L. Hartnagel1 1 TU Darmstadt, Institut fuer Hochfrequenztechnik Merckstrasse 25, D-64283 Darmstadt, Germany Tel: ++49 (0) 6151 16 3462 Fax: ++49 (0) 6151 16 4367 e-mail: msaglam-hrz2.hrz.tu-darmstadt.de University of Pavia, Department of Electronics, Italy e­m

Large-Signal Modelling of Power HFETs for K-Ka band applications P.Bianco, S.Donati, A. Ferrero, G. Ghione, M. Pirola, C.U. Naldi Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy A.Cetronio, M.Calori, C.Lanzieri, M.Peroni Alenia Marconi Systems, Advanced Research & Technologies Dept., Via Tiburtina km.12.400, Roma, Italy ABSTRACT A new large s

IMD Performances of Harmonic Tuned Microwave Power Amplifiers P.Colantonio*, F.Giannini*, G.Leuzzi**, E.Limiti* * Department of Electronic Engineering, University of Roma "Tor Vergata", Via di Tor Vergata 110, 00133 Roma ­ ITALY. ** Department of Electrical Engineering, University of L'Aquila, Poggio di Roio , 67040 L'Aquila - ITALY Tel: +(39) 6 7259 7346 ­ Fax: +(39) 6 7259 7343 ­ E-mail: paolo.