Harmonic Solution for Periodic Waveforms of the BTE's for Microwave and Millimetre-Wave Active Device Modelling G.Acciari*, F.Giannini*, G.Leuzzi+, G.Saggio* * Department of Electronic Engineering, Univ. of Roma "Tor Vergata", Via di Tor Vergata 110, 00133 Roma ­ ITALY. Tel: +(39) 06 7259 7346 ­ Fax: +(39) 06 7259 7343 ­ e-mail: acciari-uniroma2.it + Department Electrical Engineering, University

VERY HIGH POWER ADDED EFFICIENCY PHEMT AMPLIFIERS FOR GSM AND DCS 1800 APPLICATIONS. V. Serru1, E. Leclerc1, F. Huin2, J. Thuret1, S. Denis1 UMS, route Departementale 128, BP 46, 91401 Orsay Cedex, France 2 ACCO SA, 21 bis, rue d'Hennemont 78100 Saint-Germain-en-Laye, France serru-ums-gaas.com leclerc-ums-gaas.com thuret-ums-gaas.com denis-ums-gaas.com huin-acco-ic.com 1 ABSTRACT A InGaAs/AlGaAs

CONVERSION OF AlGaAs INTO InGaP EMITTER HBT RF ICs FOR IMPROVED MANUFACTURABILITY H.-F. Frank Chau, Zhengming Chen, N.-L. Larry Wang, Xiaopeng Sun and Barry Lin EiC Corporation 45738 Northport Loop West, Fremont, CA 94538, U.S.A. Email: fchau-eiccorp.com ABSTRACT The InGaP emitter HBT technology is rapidly emerging as the dominant HBT technology because of its recognized better manufacturability,

SELF-ALIGNED GATE TECHNOLOGY FOR ANALOGUE AND DIGITAL GaAs INTEGRATED CIRCUITS A.Cetronio §, F.Giannini*, C.Lanzieri§, G.Leuzzi+ § Alenia Marconi Systems, Via Tiburtina, km 12,400 - 00131 Roma, Italy * Dip. Ingegneria Elettronica, Università di Roma Tor Vergata, Via di Tor Vergata 110, Roma 00133, Italy + Dip. Ingegneria Elettrica, Università dell'Aquila, Monteluco di Roio, L'Aquila 67040, Italy P

0.3µm-N-HIGFET CAPABILITIES FOR MICROWAVE POWER APPLICATIONS M. TOUIRAT, M. ROGER, L. T. NUYEN*, Y. CROSNIER, and G. SALMER Institut d'Electronique et de Microélectronique du Nord (IEMN), Avenue Poincaré, B.P. 69, 59652 Villeneuve d'Ascq cedex, France, UMR CNRS 8520, e-mail : miloud.touirat-iemn.univ-lille1.fr * PICOGIGA, 5 Rue de la Réunion, Z. A. De Courtaboeuf, 91940 Les Ulis, FRANCE ABSTRACT

Conference Proceedings Monday 2nd - Tuesday 3rd October 2000 Organised by Microwave Engineering Europe CMP Europe Ltd City Reach 5 Greenwich View Place Millharbour London E14 9NN Tel: +44 20 7861 6391 Fax: +44 20 7861 6251 email: eumw-cmp-europe.com www.eumw.com www.mwee.com GAAS 2000 TECHNICAL PROGRAMME COMMITTEE CHAIRMAN Prof. Alain Cappy Inst. D'electronique et de Microelectronique du Nord,

MILLIMETER-WAVE IC PACKAGING TECHNOLOGY - STATE OF THE ART AND FUTURE TRENDS Keiichi Ohata Photonic and Wireless Devices Research Laboratories System Devices and Fundamental Research, NEC Corporation 2-9-1 Seiran, Otsu, Shiga 520-0833, Japan Tel: +81-77-537-7683, Fax: +81-77-537-7689, E-mail: k-ohata-ab.jp.nec.com ABSTRACT This paper presents an overview of recent state of the art technologies and

Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates C. S. Whelan, P. F. Marsh, S. M. Lardizabal, W. E. Hoke, R. A. McTaggart and T. E. Kazior Raytheon RF Components, 362 Lowell Street, Andover MA 01810 Phone: 978-684-5456, e-mail: colin_s_whelan-rrfc.raytheon.com ABSTRACT devices with intermediate (25-45%) In contents, high onand off-st

1 Submicron lateral scaling of HBTs and other vertical-transport devices: towards THz bandwidths Mark Rodwell, Y. Betser, S. Jaganathan, T. Mathew, PK Sundararajan, S.C. Martin R.P. Smith, Y. Wei, M. Urteaga, D. Scott, S. Long Abstract| With appropriate device structures, combined lithographic and epitaxial scaling of HBTs, RTDs and Schottky diodes results in rapid increases in device bandwidths.

Status of millimeter-wave MMIC's and their applications in Japan Yasutake Hirachi and Shigeru Kuroda Fujitsu Quantum Devices LTD. Hachioji Daiichi-Seimei Bldg.. 11 F, 3-20-6 Myojin-cho, Hachioji-shi, Tokyo 192-0046, Japan Phone : + 81-426-48-5793, Fax : + 81-426-48-5872 , E-mail : hirati-to.fqd.fujitsu.co.jp Abstract ­ A 50 nm-gate lattice-matched InAlAs/ InGaAs HEMT with the cutoff frequency of 3