NEAR-FIELD MEASUREMENT OF MICROWAVE ACTIVE DEVICES D. Gasquet , L. Nativel , C. Arcambal , M. Castagné , F. Dhondt , B. Mazari ,P. Eudeline #Centre d'électronique et de microoptoélectronique de Montpellier, place Eugène Bataillon 34095 Montpellier cedex 05, France Tél : 04-67-14-37-97 Fax : 04-67-54-71-34 e.mail : gasquet-cem2.univ-montp2.fr < Centre régional de ressources électroniques, 1 rue du

A UNIVERSAL MEASUREMENT SYSTEM FOR MICROWAVE POWER TRANSISTORS P. Heymann, R. Doerner and M. Rudolph Ferdinand-Braun-Institut für Höchstfrequenztechnik Albert-Einstein-Str. 11, D 12489 Berlin, Germany Phone: +49 30 63922643, Fax: +49 30 63922642 Email: heymann-fbh-berlin.de ABSTRACT We describe a measurement system for model parameter extraction and full characterization of power transistors in fr

A NEW TECHNIQUE FOR NOISE FIGURE MEASUREMENTS OF MILLIMETRE-WAVE MIXERS T. Brabetz, V.F. Fusco The Queen's University of Belfast Electrical and Electronic Engineering Ashby Building, Stranmillis Road BELFAST, BT9 5AH, UNITED KINGDOM E-mail: T.Brabetz-ee.qub.ac.uk, Phone: +44.(0)2890.27­4089, Fax: +44.(0)2890.667023 ABSTRACT A novel noise measurement method for mixers which exploits mixer noise fi

DEVELOPMENT OF TIME DOMAIN BEHAVIOURAL NON-LINEAR MODELS FOR MICROWAVE DEVICES AND ICS FROM VECTORIAL LARGE-SIGNAL MEASUREMENTS AND SIMULATIONS D. Schreurs, N. Tufillaro , J. Wood , D. Usikov , L. Barford , D.E. Root K.U.Leuven, Div. ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Leuven, Belgium E-mail: dominique.schreurs-esat.kuleuven.ac.be, Fax: +32-16-321986, Phone: +32-16-321821 Agilent Labora

PSEUDO-RANDOM PULSED IV CHARACTERISATION SYSTEM FOR GAAS MESFET/HEMT DEVICES J. Rodriguez-Tellez University of Bradford, Department of Electronic & Electrical Engineering, Bradford, West Yorkshire, BD7 1DP, England e-mail j.rodrigueztellez-bradford.ac.uk T. Fernandez, A Mediavilla, A Tazon Universidad de Cantabria, Departamento de Comunicaciones, Av. De los Castros, Santander, Spain e-mail tomas-.

1W/mm GaAs pHEMT for realization of linear power amplifier in the K band. X. Hue3, E. Rogeaux1, J. L. Cazaux1, A. Mallet2, L. Lapierre2, B. Boudart3, B. Bonte3 and Y. Crosnier3. (1) Alcatel Space Industries, 26 Av. J. F. Champollion, 31037 Toulouse Cedex (2) Centre National d'Etudes Spatiales, 18 Av. E. Belin, 31041 Toulouse Cedex (3) Institut d'Electronique et de Microélectronique du Nord, Av. Po

DESIGN OF COPLANAR POWER AMPLIFIERS FOR MM-WAVE SYSTEM APPLICATIONS INCLUDING THERMAL ASPECTS A. Bessemoulin1, W. Marsetz1, Y. Baeyens2, R. Osorio3, H. Massler1, A. Hülsmann1, M. Schlechtweg1 1Fraunhofer-Institute 2Bell for Applied Solid-State Physics (IAF), Tullastr. 72, D-79108, Freiburg, Germany Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA 3IMTEK, Albert-Ludwig-Universität, Am

SMALL SIZED HIGH-GAIN PHEMT HIGH-POWER AMPLIFIERS FOR X-BAND APPLICATIONS A.P. de Hek and P.A.H. Hunneman TNO Physics and Electronics Laboratory, P.O. Box 96864, 2509 JG The Hague, The Netherlands Phone: 31.70.374.04.09, Fax: 31.70.374.06.54, Email: deHek-fel.tno.nl ABSTRACT The development of two small sized broadband X-band high-power amplifiers is discussed. The amplifiers are realised with th

DESIGN TECHNIQUES FOR LINEAR REQUIREMENTS FOR MMIC POWER AMPLIFIERS Thomas Emanuelsson, Stefan Thöresson Ericsson Microwave Systems AB, S-431 84 Mölndal, Sweden, Thomas.Emanuelsson-emw.ericsson.se Stefan.Thoresson-emw.ericsson.se ABSTRACT Measurements and simulations on MESFET's and GaAs HBT's shows that intermodulation suppression and efficiency can be greatly improved by applying the correct lo

A 3V SMALL CHIP SIZE GSM HBT POWER MMIC WITH 56% PAE J.-E. Mueller1, U. Gerlach², G. L. Madonna1, M. Pfost1, R. Schultheis1, P. Zwicknagl³ 1 Infineon Technologies, WS TI S MWP, Otto-Hahn-Ring 6, D81730 Munich, Germany ² Infineon Technologies, WS GS CE GaAs, Balanstr. 73, D81617 Munich, Germany ³ Infineon Technologies, WS GS D HT, Balanstr. 73, D81617 Munich, Germany Email: jan-erik.mueller-infine