A STRAIGHTFORWARD METHOD FOR DETERMINING SiGe HBTs INTRINSIC ELEMENTS OF HIBRID PI AND TEE SMALL-SIGNAL CIRCUIT MODELS FOR MULTIBIAS OPERATION J.M. Zamanillo, J.A. García, A. Mediavilla, A. Tazón and C.Pérez-Vega University of Cantabria - Communications Engineering Department (DICOM) Av. de los Castros s/n. 39005, Santander, Spain Phone +34-942-201391 ext. 13, Fax +34-942-201488, E-mail: zama-dico

Ledge Design of InGaP Emitter GaAs Based HBTs K. S. Stevens, R. E. Welser, M. Chaplin, C. R. Lutz, and N. Pan Kopin Corporation, 695 Myles Standish Boulevard, Taunton, MA 02780 Phone: (508) 824-6696 email: kstevens-kopin.com ABSTRACT A wide range of emitter composition, thickness, and doping is studied via dc current gain measurements on large area GaAs based heterojunction bipolar transistors (HB

Modeling of Current-gain Collapse in Multi-finger HBT's Akhil Garlapati and Sheila Prasad Dept. of Electrical and Computer Eng., 418 Dana Research Center, Northeastern University, 360 Huntington Avenue, Boston, MA 02115, USA. Ph. No. 617-373-3010, Fax No. 617-373-8970, e-mail : prasad-ece.neu.edu July 6, 2000 Abstract This paper presents an equivalent circuit model for common-emitter current-gain

Pulsed Electrical Stress Techniques for the Detection of Non-thermal Lifetime-Problems with Semiconductor Devices and their IC's B. Mottet, C. Sydlo, H. L. Hartnagel Institut fuer Hochfrequenztechnik, TU Darmstadt Merckstrasse 25, D-64283 Darmstadt, Germany Tel: ++49 (0) 6151 16 2862 FAX: ++49 (0) 6151 16 4367 e-mail: b_mottet-hf.tu-darmstadt.de ABSTRACT A method is presented for the investigation

The Reliability of III-V semiconductor Heterojunction Bipolar Transistors M. Borgarino*, R. Plana*, J. Graffeuil*, L.Cattani^, F. Fantini° LAAS du CNRS, Avenue du Colonel Roche, 31077 Toulouse, France mattia-laas.fr ^DII, Universita' degli Studi di Parma, Viale delle Scienze, 43100, Parma, Italy ° DSI, Universita' degli Studi di Modena e Reggio Emilia, Via Campi, 41100 Modena, Italy The Heterojun

MMIC RELIABILITY AND QUALIFICATION P. Huguet, G. Pataut UMS, route départementale 128 91400 ORSAY FRANCE phone: 33 1 69 33 03 47 e-mail: huguet-ums-gaas.com, pataut-ums-gaas.com ABSTRACT ­ This paper presents an overview of the MMIC reliability aspects. The origin of MMIC failure in the field is discussed. The manufacturer evaluation qualification methodologies are presented, together with result

BREAKDOWN AND HIGH-FIELD RELIABILITY ISSUES IN HETEROJUNCTION FETs FOR MICROWAVE POWER AMPLIFICATION R. Menozzi Dipartimento di Ingegneria dell'Informazione, University of Parma Parco Area delle Scienze 181A, 43100 Parma, Italy e-mail: r_menozzi-ee.unipr.it ABSTRACT High-field reliability issues connected with hot electron and impact ionization are typically the reliability bottleneck of power FE

The Use of Cryogenic HEMT Amplifiers in Wide Band Radiometers Norman Jarosik Department of Physics Princeton University Princeton, NJ 08540 (609)258-5862 (voice) (609)258-6853 FAX jarosik-pupgg.princeton.edu July 17, 2000 Abstract Advances in device fabrication, modelling and design techniques have made wide band, low noise cryogenic amplifiers available at frequencies up to 106 GHz. Microwave ra

CRYOGENIC MMIC LOW NOISE AMPLIFIERS S. Weinreb1, T. Gaier1, J. E. Fernandez1, N. Erickson2, and J. Wielgus2 1 Jet Propulsion Laboratory, California Institute of Technology, sander.weinreb-jpl.nasa.gov Department of Physics and Astronomy, U. of Massachusetts, neal-fcrao1.phast.umass.edu 2 ABSTRACT Monolithic (MMIC) and discrete transistor (MIC) low noise amplifiers are compared on the basis of p

FET Noise Model Extraction Methods Jörgen Stenarson1,*, Niklas Wadefalk 1 , Mikael Garcia 2 , Iltcho Angelov1 , Herbert Zirath1 1 Chalmers University of Technology, Microwave Electronics Laboratory, 412 96 Göteborg, Sweden * E-mail: stenarson-ep.chalmers.se 2 Raytheon RF Components, CAD/modeling Dept., 362 Lowell Street, Andover, MA 01810, USA Abstract This paper presents an overview of the nois