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A L-BAND 50-WATT GaAs POWER FET WITH 58% POWER ADDED EFFICIENCY Hisanori Hayashi, Norihiko Ui, Toshiaki Saito and Jun Fukaya FUJITSU QUANTUM DEVICES LIMITED Kokubo-Kogyodanchi Showa-cho Nakakoma-gun Yamanashi-ken 409-38 JAPAN Phone 81-55-275-4411 Fax 81-55-268-0246 E-mail h-hayasi-fqd.fujitsu.co.jp (Hisanori Hayashi) Abstract High efficiency 50W GaAs power device has been developed using two hig

MICROWAVE EQUIPMENT FOR NAVIGATION OVERLAY (NOS) SERVICE M.C.Comparini, R.Giubilei, P.Tranquilli Alenia Spazio ­ Payload and Equipment Unit Via Saccomuro 24, 00131, Roma, Italy Abstract The aim of the Navigation Overlay Service (NOS) payload (NOS P/L) is to provide an overlay function with supplementary services to the current operating GPS. This kind of services uses existing GEO telecommunicati

DESIGN OPTIMISATION OF ULTRA-SHORT GATE HEMTS USING MONTE CARLO SIMULATION Javier Mateos, Tomás González, Daniel Pardo Departamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain Phone: (34) 923294436 FAX: (34) 923294584 e-mail: javierm-gugu.usal.es Virginie Hoel, Sylvain Bollaert, Alain Cappy Institut d'Electronique et Microélectronique du Nord U.M.R.

Modeling of GaN-based heterostructure devices Fabio Sacconi, Aldo Di Carlo, F. Della Sala, and P. Lugli INFM and Dept. Elect. Eng. University of Rome "Tor Vergata", via di Tor Vergata 110, 00133 Roma (Italy) e-mail : dicarlo-ing.uniroma2.it Self-consistent quantum models of GaN-based nanostructures are presented. We report on the calculation of electrical characteristics of AlGaN/GaN heterojuncti

LOW FREQUENCY DISPERSION EFFECTS ON THE INPUT CHARACTERISTICS OF MICROWAVE FETs Vicentiu I. Cojocaru and Thomas J. Brazil Department of Electronic and Electrical Engineering University College Dublin, Dublin 4, Ireland. Tel: +353-1-7061912; Fax: +353-1-2830921; Email: vivi-hertz.ucd.ie ABSTRACT The paper presents the experimental results of a low frequency test carried on a packaged GaAs MESFET,

IMPROVING UNDERSTANDING OF THE RF CIRCUIT BEHAVIOUR OF CONTEMPORARY SEMICONDUCTOR DEVICES THROUGH FAST-SAMPLING I(V) CURVE TRACER MEASUREMENTS. P.H.Ladbrooke, J.P.Bridge, N.J.Goodship and D.J.Battison GaAs Code Ltd The Old Station, Station Road Linton, Cambridge CB1 6NW, England Email: gaascode-aol.com Website: www.gaascode.com ABSTRACT Most contemporary semiconductor devices exhibit dynamic I(V)

Millimeter-wave FET modeling based on a frequency extrapolation approach A.Cidronali+, G.Collodi+, A.Santarelli*, G.Vannini,* C.Toccafondi+ + Dept. of Electronics and Telecommunications, University of Firenze, Via S. Marta 3, 50139 Firenze, Italy *CSITE-CNR, V.le Risorgimento 2, 40136 Bologna, Italy Department of Engineering, University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy ABSTRACT A

Application of Silicon-based RF IC devices in space communication systems & equipment F.Adirosi, M.C.Comparini, C.Leone Alenia Spazio S.p.A., RF and Microwave Engineering Via Saccomuro 24, 00131, Roma, Italy Phone: +39 06 41512582 Fax: +39 06 41512507 Email: c.leone-roma.alespazio.it Abstract- In the next few years, we will see the - construction of systems based on constellations of medium size s

TOWARDS FULLY INTEGRATED CMOS RF RECEIVERS I.Bietti*, F.Svelto· and R. Castello# "Studio di Microelettronica" STMicroelectronics V. Ferrata, 1­27100 Pavia-Italy e-mail: ivan.bietti-st.com * · # Dipartimento di Ingegneria Università di Bergamo V. Marconi,5 - Dalmine (BG) e-mail: fsvelto-ele.unipv.it Dipartimento di Elettronica Università di Pavia V. Ferrata, 1­27100 Pavia-Italy e-mail: castello-e