MM-wave on-wafer characterization of electro-optic devices: a new, simple approach A.Ferrero1, G.Ghione1 , F.Mantione2, A.Nespola2, S.Pensa2 and M.Pirola1 1 Politecnico di Torino, Corso Duca degli Abruzzi 24, Torino, Italy 2 Pirelli Componenti Ottici, Viale Sarca 222, Milano, Italy ABSTRACT A new simple experimental set-up both for on-wafer and in-package electrical and electro-optic characteriz

OPTIMUM NON-LINEAR DESIGN OF ACTIVE MICROWAVE MIXERS Franco Giannini*, Giorgio Leuzzi+, Ernesto Limiti*, Fabio Morgia* * Dip. Ingegneria Elettronica, Università di Roma Tor Vergata, Via di Tor Vergata 110, Roma 00133, Italy + Dip. Ingegneria Elettrica, Università dell'Aquila, Monteluco di Roio, L'Aquila 67040, Italy Phone: +39.06.7259.7351 - Fax: +39.06.7259.7353 - E-mail: leuzzi-ing.univaq.it AB

STABILITY ANALYSIS OF MULTI-TRANSISTOR MICROWAVE POWER AMPLIFIERS A.Costantini , G.Vannini,+, F.Filicori °, A.Santarelli + Department of Engineering, University of Ferrara, Via Saragat 1, 44100 Ferrara, Italy. email: acostantini-ing.unife.it, gvannini-ing.unife.it ° Department of Electronics, University of Bologna, Viale Risorgimento 2, 40136 Bologna, Italy. email: ffilicori-deis.unibo.it + CS

Using Average RF Gate and Drain Currents to Determine Gain Compression Mechanisms for Narrow-recessed and Wide-recessed MESFETs C. C. Meng, J. W. Chen, C. H. Chang, L. P. Chen*, H. Y. Lee*and J. F. Kuan* Department of Electrical Engineering National Chung-Hsing University Taichung, Taiwan, R.O.C. e-mail:ccmeng-nchu.edu.tw *National Nano Device Laboratories Hsin-Chu, Taiwan, R.O.C. ABSTRACT: Knee

RF versus Microwave High Efficiency PA Design P.Colantonio*, F.Giannini*, G.Leuzzi**, E.Limiti* * Department of Electronic Engineering, University of Roma "Tor Vergata", Via di Tor Vergata 110, 00133 Roma ­ ITALY. ** Department of Electrical Engineering, University of L'Aquila, Poggio di Roio , 67040 L'Aquila - ITALY Tel: +(39) 6 7259 7346 ­ Fax: +(39) 6 7259 7343 ­ E-mail: paolo.colantonio-uniro

A NOVEL MEASUREMENT METHOD FOR THE EXTRACTION OF DYNAMIC VOLTERRA KERNELS OF MICROWAVE POWER AMPLIFIERS N. Le Gallou*, D. Barataud**, H. Buret*, J.M. Nebus **, E. Ngoya**, * ALCATEL SPACE INDUSTRIES, 26 Av. J.F. Champollion, 31037 Toulouse cedex (France) ** IRCOM, , UMR CNRS 6615, University of Limoges, 123 av Albert Thomas , 87060 Limoges cedex (France) e-mail : Nicolas.Le-Gallou-space.alcatel.fr

GAAS Sessions q GAAS/INV1: q GAAS1/FS: q GAAS2/FS: q GAAS3: q GAAS4: q GAAS/P1: q GAAS/P2: q GAAS/INV2: q GAAS5/FS: q GAAS6/FS: Focused Session on Cryogenically Cooled Amplifiers Focused Session on Reliability HBT Modelling and Device Design Process Technology and characterisation Poster Session Poster Focused Session - Device Characterisation and Modelling Plenary Session Focused Session on Terah

European Microwave Week / GAAS 2000 GAAS ­ EuMC ­ P1 - 436 RF MEMS: Silicon micro-mechanical capacitive structures. G. Bazin*, J.P. Gilles**, P. Crozat**, Souhil Megherbi** *Groupe ESIEE - Noisy-le-Grand ­ France, **IEF - Université Paris Sud - Orsay ­ France bazing-esiee.fr, jean-paul.gilles-ief.u-psud.fr, paul.crozat-ief.u-psud.fr, sm-ief.u-psud.fr Abstract ­ The general study is dedicated to

HBT TECHNOLOGY FOR HIGH POWER X BAND AND BROADBAND AMPLIFICATION. P.F. ALLEAUME* , Ph. AUXEMERY**, J.P. VIAUD*, H. BLANCK** , M. LAJUGIE* *Thomson-CSF Microelectronique 29 av CARNOT 91349 MASSY Cedex France. ** United Monolithic Semiconductors Route départementale 128 91401 ORSAY Cedex France. Pierre-Franck.Alleaume-TCM.THOMSON-CSF.COM Philippe.AUXEMERY-UMS-GAAS.COM Jean-Pierre.VIAUD-TCM.THOMSON-C

Narrowband active GaAs MMIC filters in K-band J. Vindevoghel*, P. Descamps** * Institut d'Electronique et de Microélectronique du Nord (IEMN) ­ UMR CNRS 8520 Université des Sciences et Technologies de Lille Avenue Poincaré BP 69 F ­ 59652 Villeneuve d'Ascq Cedex Ph : +33 (0)3 20 19 79 32 Fax : +33 (0)3 20 19 78 95 E-mail : jean.vindevoghel-iemn.univ-lille1.fr ** Now with : ISMRA ­ ENSI Caen 6, Bou