High Power GaAs MMIC Chipsets for 18 to 32 GHz Frequency Band Applications A.Betti-Berutto*, C.Poledrelli*, R. Benelbar*, S.T. Chen*, C. Khandavalli * T. Satoh**, Y. Hasegawa**, S.Kuroda**, J.Fukaya** * Fujitsu Compound Semiconductor Inc., San Jose, CA, USA. aberutto-fcsi.fujitsu.com ** Fujitsu Quantum Devices Ltd., Japan ABSTRACT Recent commercial wireless applications such as Point to Point radi

4W GaAs MMIC Power Amplifier for PCS and W-CDMA Base Station Frédy König*, Haruo Shimizu**, Hidenori Takahashi** Shigemi Miyazawa**, Jun Fukaya**. * Fujitsu Microelectronics Europe Quantum Device Division, Network House, Maidenhead SL6 4FJ, UK. **Fujitsu Quantum Devices Ltd., Yamanashi, 409-3883 Japan. Abstract ­ A three stage amplifier has been developed for PCS, EDGE and W-CDMA applications. Us

A novel high Q active inductor for millimeter wave applications G. Avitabile*, B. Chellini*, F. Giannini+, E. Limiti+ *Dipartimento di Elettronica e Elettrotecnica, Politecnico di Bari +Dipartimento di Elettronica, Università di Roma 2 "Tor Vergata" gfa-poliba.it limiti-uniroma2.it Abstract - The paper introduces an active inductor implementation suitable for microwave and millimeter wave applic

Resistive Monolithic Q-Band HEMT Mixer for MVDS Applications B. Aja*, M.L. de la Fuente*, J.A. García**, J.P. Pascual*, E. Artal* * Dpto. Ing. de Comunicaciones. Universidad de Cantabria. SPAIN beatriz-dicom.unican.es **At present: TTI Norte. SPAIN jagarcia-ttinorte.es Abstract - This paper describes the design of a resistive monolithic Q-band HEMT mixer for optimum conversion loss and IMD perfo

Design Procedure for Loss Compensation of Planar Microwave Filters Using Negative Resistances For Tuneable Bandstop and Bandpass Applications Frédéric Biron, Jean-Philippe Plaze, Laurent Billonnet, Dominique Cros, Bernard Jarry, Pierre Guillon I.R.C.O.M. U.M.R. C.N.R.S. n°6615 -123, Av. A .Thomas 87060 Limoges Cedex, France gary-ircom.unilim.fr Abstract - In this paper, we present a method to sy

A Hybrid Micromachined High -Q Cavity Resonator at 5.8 GHz Christophe A. Tavernier1, Rashaunda Henderson2 and John Papapolymerou1 1 2 Dept. of Electrical and Computer Engineering, The University of Arizona, Tucson, AZ 85721 Materials and Structures Labs, Motorola, Semiconductor Products Sector, Tempe, AZ, 85284 Abstract-A novel hybrid micromachined resonator with high quality factor and small si

A Monolithic Double-balanced Upconverter for millimeter-wave Point-to-Multipoint Distribution Systems K. S. Ang and I. D. Robertson Microwave and Systems Research Group School of Electronic Engineering, Information Technology and Mathematics University of Surrey Guildford, Surrey GU2 7XH, UK k.ang-eim.surrey.ac.uk Abstract - The design and performance of a monolithic double-balanced upconverter f

Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz Lars Landén, Christian Fager, Herbert Zirath Chalmers University of Technology, Department of Microelectronics landen-ep.chalmers.se, fager-ep.chalmers.se, zirath-ep.chalmers.se Abstract -- The design and characterization of two regenerative frequency dividers based on a commercial foundry GaAs HEMT-process are described. The dividers ar

10W C-BAND HIGHLY EFFICIENT HYBRID-MMIC AMPLIFIER A.Darbandi*, M.Zoyo*, L.Loval**, H.Buret*, and F.Michard* *Alcatel Space Industries BP 1187 26 avenue J.F. Champollion 31037 Toulouse France **Alcatel CIT 5 rue Nöel-Pons 92734 NANTERRE FRANCE Phone: (33) + 5.34.35 57.69 e-mail : alireza.darbandi-tehrani-space.alcatel.fr ABSTRACT - A very high efficient, low distortion C-band Hybrid-MMIC Amplifier

1 Fully Integrated PHEMT Voltage Controlled Oscillator with Very High Tuning Bandwidth A. Megej, K. Beilenhoffy , and H.L. Hartnagel Institut für Hochfrequenztechnik, Technische Universität Darmstadt, Merckstraße 25, D-64283 Darmstadt, Germany. E-mail: megej-tu-darmstadt.de Abstract -- Design concepts of fully monolithically integrated VCOs are presented that include special solutions for increa