A Monolithic, Dual Channel, 0.5 to 20GHz Limiter L.M.Devlin*, A.W.Dearn*, P.D.L.Beasley *Authors with Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK Author with DERA, St. Andrews Road, Great Malvern, Worcestershire, WR14 3PS (lmd-plextek.co.uk) Abstract - This paper details a dual channel limiter IC, fabricated as a single die using a commercially available PIN diode process. Th

NEW COLD FET I-Q LINEAR VECTOR MODULATOR TOPOLOGY Cyrille Boulanger, Luc Lapierre, Francis Gizard CNES 18, Av E. Belin 31401 Toulouse cedex. Phone : (33) 5.61.27.37.85 Fax : (33) 5.61.28.26.13 E-Mail : cyrille.boulanger-cnes.fr I- ABSTRACT This paper presents the design, manufacture and test of a new cold FET monolithic I-Q vector modulator. The circuit has been developed in 8­8.4 GHz X band but c

ORIGINAL TOPOLOGY OF GaAs-PHEMT MIXER D. Dubuc, T. Parra and J. Graffeuil LAAS / CNRS et Université Paul Sabatier 7 av. du Colonel Roche, 31 077 TOULOUSE cedex 4, FRANCE. +33(0)561336922, fax. +33(0)561336969, dubuc-laas.fr Abstract : An original topology of GaAs PHEMT mixer is investigated under high conversion gain consideration. Mixer topology is based on "LO source-injection" concept, since R

X BAND MMIC direct 8 Phase Shift Keying modulator for high data rate earth observation applications C. Boulanger, L. Lapierre, F. Gizard, C. Zanchi, G. Lesthievent CNES ­ 18 Avenue Edouard Belin ­ 31401 Toulouse Cedex 04 France Phone : (33) 5.61.27.37.85 Fax : (33) 5.61.28.26.13 e-mail : cyrille.boulanger-cnes.fr Abstract - We present a new topology of 8 Phase Shift Keying modulator that allows ac

A GaAs MMIC CHIP-SET FOR 10 to 15GHz RADIO-LINKS APPLICATIONS P. Quentin1, A. Gallien1, F. Rasà2, B. Gabbrielli2 United Monolithic Semiconductors, RD128, BP46, 91401 ORSAY, Cedex, France Tel. 33-1-6933-0587 / Fax. 33-1-6933-0552 / e.mail pierre.quentin-ums-gaas.com 2 Alcatel Italia, str. provinciale per Monza, 33, 20049 Concorezzo (MI), Italy Tel. 39-039-686-5664 / Fax. 39-039-686-5600 / e.mail f

Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate M. Goffioul, J.-P. Raskin and D. Vanhoenacker-Janvier Université catholique de Louvain, Microwave Laboratory, Place du Levant, 3 B-1348 Louvain-la-Neuve, Belgium vanhoenacker-emic.ucl.ac.be Tel.: + 32 10 47 23 04, Fax: + 32 10 47 87 05 Abstract - This paper shows the feasibility of implementing CMOS microwave oscillators on S

Microwave tunable straight edge resonator on silicon membrane George Sajin(*), Elena Matei(*), Romolo Marcelli(**) National Research and Development Institute for Microtechnologies, 32B Erou Iancu Nicolae str., PO Box 38-160, 72996, Bucharest, Romania, Phone: +40-1-231.30.40, E-mail: gsajin-imt.ro; elenama-imt.ro (**) M2T - Microwave Microsystems Technology, CNR, Via del Fosso del Cavaliere 100, 0

A WIDEBAND GAAS 6-BIT TRUE-TIME DELAY MMIC EMPLOYING ON-CHIP DIGITAL DRIVERS John G. Willms, Aziz Ouacha*, Lex de Boer, Frank E. van Vliet TNO Physics and Electronics Laboratory , P.O. Box 96864, 2509 JG, The Hague, The Netherlands Phone: 31.70.374.04.22, Fax: 31.70.374.06.54, Email: Willms-fel.tno.nl * FOA Defence Research Establishment, P.O. Box 1165, SE-581 11, Linköping, Sweden w avefront Ab

A LOW NOISE KA-BAND DOWN CONVERTER FOR SPACE APPLICATIONS Nagaraja Rao, Andrew Parfitt, Anna Dadello, Damon Ward, Trevor Bird Cooperative Research Centre for Satellite Systems CSIRO Telecommunications and Industrial Physics P O Box 76, Epping, NSW 1710 Australia E-mail: nagaraja.rao-tip.csiro.au Abstract ­ A Ka-band down converter has been developed for use in a transponder to be flown on board a

Single Chip 58 GHz Radio Relay Front End Philippe Marchand, Philippe Gouessant Alcatel CIT, Nanterre, France Abstract: This article describes a solution for a low cost front end to be used in point to point radio relays operating in the uncoordinated 57.5 to 59 GHz frequency band. The main characteristics of the equipment operating in this band in Europe have recently been agreed in draft by the