Monolithic Low-Noise Amplifiers up to 10 GHz in Silicon and SiGe Bipolar Technologies student paper o Dietmar Z¨schg1,2 , Wilhelm Wilhelm1 , Herbert Knapp1 , Klaus Aufinger1 , Josef B¨ck1 , o T.F. Meister1 , Martin Wurzer1 , Hans-Dieter Wohlmuth1 , Arpad L. Scholtz2 1 INFINEON Technologies AG, Otto-Hahn-Ring 6, D-81739 Munich, Germany, Tel.: +49 89 234-48432, Fax.: +49 89 234-47069, E-Mail: Dietm

Decade Wide Bandwidth Integrated Very Low Noise Amplifier J.G. Bij de Vaate, E.E.M. Woestenburg, R.H. Witvers, R. Pantaleoni, Netherlands Foundation for Research in Astronomy, Dwingeloo, The Netherlands P.O. Box 2, 7990 AA Dwingeloo, The Netherlands Phone: +31-521-595100 Fax: +31-521-597332 E-mail: vaate-nfra.nl 1. Abstract This paper describes the design, realization and characterization of an i

Novel Series and Shunt MEMS Switch Geometries for X-Band Applications Jeremy B. Muldavin and Gabriel M. Rebeiz Radiation Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, 48109-2122, USA. muldavin-engin.umich.edu, rebeiz-umich.edu. Abstract -- In this paper, novel metal membrane series switches and inductively tuned shunt switches

Integrated Millimeter-Wave Silicon Micromachined Filters P. Blondy*, F.Baleras**, D. Cros*, C. Massit**, P. Guillon*, C. Zanchi ***, L. Lapierre***, J. Sombrin*** *IRCOM, 123 Avenue Albert Thomas 87060 LIMOGES **CEA ­ LETI 17, rue des martyrs 38054 GRENOBLE, *** CNES av. E Belin 31000 TOULOUSE e-mail : pblondy-ircom.unilim.fr Abstract - This paper describes the design and the fabrication of a new

Finite Ground Coplanar Waveguide Shunt MEMS Switches for Switched Line Phase Shifters George E. Ponchak, Rainee N. Simons, Maximilian C. Scardelletti, and Nicholas C. Varaljay NASA Glenn Research Center 21000 Brookpark Rd., MS 54/5 Cleveland, OH 44135 TEL: 216-433-3504, FAX: 216-433-8705 George.Ponchak-grc.nasa.gov Abstract - Switches with low insertion loss and high isolation are required for sw

MICROSYSTEMS BY BULK MICROMACHINING M. Esashi New Industry Creation Hatchery Center, Tohoku University, Sendai, 980-8579, Japan, esashi-cc.mech.tohoku.ac.jp ABSTRACT Deep RIE (Reactive Ion Etching) was developed not only for silicon but also for other materials and silicon microstructures made by the deep RIE was used as molds for making ceramic microstructures. Packaged micro mechanical sensors

A Gate Bias Free Power MMIC Module for Ka-Band High-speed Wireless Applications S.Ichikawa, T.Satoh, T.Shimura, A.Betti-Berutto*, Y.Furukawa, Y.Hasegawa, S.Kuroda and J.Fukaya Fujitsu Quantum Devices Ltd. Kokubo Kogyo Danchi, Showa, Nakakoma, Yamanashi 409-3883, JAPAN * Fujitsu Compound Semiconductor Inc. 2355 Zanker Road, San-Jose, CA 19131-1138, USA Abstract - A high power and high gain package

Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range Egor Alekseev, Shawn S.H. Hsu, and Dimitris Pavlidis Department of EECS, University of Michigan, Ann Arbor, Michigan 48109-2122, USA yegor-umich.edu pavlidis-umich.edu http://www.eecs.umich.edu/dp-group/ Tadayoshi Tsuchiya and Michio Kihara Advanced Research Center, Hitachi Cable, 3550 Kidamari, Tsuchiura, 300-0026, Japan Abstract

High efficiency LOW AM/PM 6W C-band MMIC power amplifier for a space radar program Y. Butel, T. Adam, B. Cogo, M. Soulard Alcatel Space Industries - 26 AV. JF Champollion -BP 1187 - 31037 Toulouse ­France yves.butel-space.alcatel.fr Abstract - This paper describes the design of a compact C-band MMIC power amplifier. Intensive non-linear and electro-magnetic simulations with accurate table-based m

VERY HIGH VOLUME GaAs MMICs Christopher M. Snowden Filtronic plc., The Waterfront, Salts Mill Road, Shipley. BD18 3TT. UK. csnowden-filct.com ABSTRACT The increase in demand for high performance semiconductor devices to supply the mobile communications market has led to dramatic developments in the compound semiconductor business, with the launch of a number of 6" GaAs foundries. The background t