MOS Transistor Modeling for RF IC Design Christian Enz CSEM SA Neuchâtel, Switzerland christian.enz-csem.ch ABSTRACT The design of radio-frequency (RF) integrated circuits (ICs) in deep-submicron CMOS processes requires accurate and scalable compact models of the MOS transistor that are valid in the GHz frequency range and beyond. Unfortunately, the currently available compact models give inaccura

SILICON TECHNOLOGIES FOR RF APPLICATIONS Pietro Erratico STMicroelectronics Via Tolomeo, 1 - Cornaredo (Milan) - Italy e-mail: pietro.erratico-st.com ABSTRACT The following paper would like to give an idea of the present status of silicon technologies used for the analog front-end of communication systems. The frequency spectrum of application is that of the mobile communications standards (up to

ARTIFICIAL NEURAL NETWORK APPROACH FOR MMIC PASSIVE AND ACTIVE DEVICE CHARACTERIZATION F.Giannini *, G.Leuzzi , G.Orengo *, M.Albertini * * Dipartimento di Ingegneria Elettronica - Università "Tor Vergata" - via Tor Vergata 110 - 00133 Roma - Italy ­ tel ++39067259 7345 ­ fax 7343(53) - e_mail: orengo-ing.uniroma2.it Dipartimento di Ingegneria Elettrica ­ Università di L'Aquila ­ Monteluco di Roi

APPLICATION OF NEURAL NETWORKS TO EFFICIENT DESIGN OF WIRELESS AND RF CIRCUITS AND SYSTEMS Ravender Goyal and Vladimir Veremey Xpedion Design Systems, Inc. 4677 Old Ironsides Drive, Santa Clara, CA, 95035 Phone: (408) 987- 0603, Fax: (408) 987- 0615 www.xpedion.com e-mail: ravenderg-xpedion.com vladimirv-xpedion.com ABSTRACT Complexity of RF designs in a wireless system continues to increase sign

TRACKING SIC FET DEVELOPMENTS WITH A FET SIMULATOR P.H.Ladbrooke and J.P.Bridge GaAs Code Ltd The Old Station, Station Road Linton, Cambridge CB1 6NW, England Email: gaascode-aol.com Website: www.gaascode.com & M.J.Uren, D.G.Hayes, K.P.Hilton and R.G.Davis, Defence Research and Evaluation Agency, St. Andrews Road, Malvern, Worcs. WR14 3PS England ABSTRACT SiC FETs promise high voltage working, hig

ELECTROTHERMAL HARMONIC BALANCE SIMULATION OF AN INGAP/GAAS HBT BASED ON 3D THERMAL AND SEMICONDUCTOR TRANSPORT MODELS R. Sommet, D. Lopez, R. Quéré I.R.C.O.M. - C.N.R.S. U.M.R. n° 6615, I.U.T. G.E.I.I., 7, rue Jules Vallès 19100 Brive la Gaillarde sommet-brive.unilim.fr ABSTRACT A parallel implementation of the direct coupling of InGaP/GaAs HBT transport equations has been included in an Harmoni

Digital Circuits in a Multi-Functional SAGFET MMIC Technology M.R. Casu, C. Lanzieri , G. Masera, G. Piccinini, M. Zamboni Politecnico di Torino, C.so Duca degli Abruzzi 24 - I10129 Torino - Italy, phone +39 011 5644004, fax +39 011 5644112, e-mail casu-polito.it Alenia Marconi Systems, Via Tiburtina, km 12.400, 00131 Roma, Italy phone +39 06 41503194, e-mail clanzieri-aleniasystems.finmeccanica.i

AN ULTRA-HIGH SWITCHING FREQUENCY STEP-DOWN DC-DC CONVERTER BASED ON GALLIUM ARSENIDE DEVICES M. GAYE, S. AJRAM, P.MAYNADIER* and G. SALMER IEMN, UMR CNRS 8520, Avenue Poincaré, B.P. 69, 59652 Villeneuve d'Ascq cedex, France, E-mail : Mamadou.Gaye-iemn.univ-lille1.fr * ALCATEL SPACE INDUSTRIES, 26, Av. Champollion BP 1187 31037 Toulouse cedex, France. ABSTRACT A 50MHz to 100MHz dc-dc power conver

DIRECT DIGITAL MODULATION INTRODUCED VIA OPTICALLYCONTROLLED GAPS IN ACTIVE MMIC on GaAs. A. Merrar, F. Deshours, C. Algani, C. Nardini and G. Alquié L.I.S. - MEMO Group - Université Pierre et Marie Curie, 4 Place Jussieu, B.C. 252, 75252 Paris Cedex 05, France : (33) 1 44 27 74 59 Fax : (33) 1 44 27 75 09 : algani-lis.jussieu.fr ABSTRACT An application of optically controlled gap integrated in a

Balanced Electroabsorption Modulator for High-Linearity, Low-Noise Microwave Analog Optical Link F. Cappelluti*,, S. Mathai*, M.C. Wu*, G. Ghione Electrical Engineering Department, University of California, Los Angeles, Dipartimento di Elettronica, Politecnico di Torino, corso Duca degli Abruzzi 24, I-10129 Torino, Italy. * ABSTRACT The paper presents a new device for analog optical links, the