SEMI- AND SUPER-CONDUCTING TECHNOLOGIES FOR THE MILLIMETER AND SUBMILLIMETRE WAVE APPLICATIONS by G. Beaudin Observatoire de Paris, DEMIRM, UMR CNRS 8540 61 avenue de l'Observatoire - 75014 Paris - France e-mail : gerard.beaudin-obspm.fr ABSTRACT Millimeter and submillimeter-wave observations provide important informations for the studies of atmospheric chemistry and of astrochemistry (molecular

MICROMACHINING IN TERAHERTZ TECHNOLOGY C. M. Mann* Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, The United Kingdom c.m.mann-rl.ac.uk *Flann Microwave, Dunmere Road, Bodmin, Cornwall, PL31 2QL The United Kingdom chris.mann-flann.com ABSTRACT Terahertz waveguide components incorporating integrated RF circuits have now been realised with state of the art performance to 2.5THz. Prese

Recent Development in Device Technology for Integrated THz-Circuits H. L. Hartnagel, C.-I Lin, M. Rodriguez, V. Ichizli, M. Saglam, P. Szeliga Institut für Hochfrequenztechnik, TU Darmstadt Merckstrasse 25, D-64283 Darmstadt, Germany Tel: ++49 (0) 6151 16 2162 FAX: ++49 (0) 6151 16 4367 e-mail: thzuser-hf.tu-darmstadt.de ABSTRACT Recently there is significantly increasing interest in the developme

HETEROSTRUCTURE BARRIER VARACTOR MULTIPLIERS Lars Dillner, Mattias Ingvarson, Erik Kollberg and Jan Stake Microwave Electronics Laboratory, Chalmers University of Technology, Göteborg, Sweden. ABSTRACT The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is reviewed. Different material systems and HBV models are described. Multiplier performance versus di

InP-BASED HBT WITH GRADED InGaAlAs BASE LAYER GROWN BY LP-MOVPE S-O. Kim, P. Velling, M. Agethen, Th. Reimann, W. Prost, and F.-J. Tegude Department of Solid State Electronics, Gerhard-Mercator-University Duisburg, Lotharstrasse 55 (ZHO), D-47057 Duisburg, Germany Tel. 0203-379-3878, E-mail: kim-hlt.uni-duisburg.de ABSTRACT A compositionally graded InGaAlAs:C base layer is inserted in an InP-based

Enhancement/Depletion Mode InGaP/AlGaAs PHEMT Process for High Efficiency Power Amplifiers Y. Tkachenko, Y. Zhao, C. Wei, and D. Bartle Alpha Industries. Inc., 20 Sylvan Rd, Woburn, MA 01801 Tel: 781-935-5150; E-mail: gtkachenko-alphaind.com ABSTRACT An integrated enhancement/depletion mode InGaP/AlGaAs power PHEMT process is demonstrated for various single- and dual-supply high efficiency power a

ELECTROLUMINESCENCE OF METAMORPHIC InxAl1-xAs / InxGa1-xAs HEMTs ON GaAs SUBSTRATE N. Cavassilas*, F. Aniel*, A. Nojeh*, R. Adde*, M. Zaknoune**, S. Bollaert**, Y. Cordier**, D Théron**, and A Cappy** *Institut d'Electronique Fondamentale, U.M.R..- C.N.R.S 8622 Université Paris XI, 91405 Orsay Cedex, France. nicolas.cavassilas-ief.u-psud.fr **Institut d'Electronique et de Microélectronique du Nord

High Uniformity 6" InGaP/GaAs Heterojunction Bipolar Transistors P.M. DeLuca, J. Rodrigues, B.-K. Han, and N. Pan Kopin Corporation 695 Myles Standish Blvd. Taunton, MA 02780 The growth of highly uniform, state-of-the-art InGaP/GaAs heterojunction bipolar transistors is demonstrated in a multi-wafer 6-inch configuration (AIX 2600). The uniformity of thickness, doping, composition, interface proper

A Novel Direct Extraction Method for Internal Equivalent Circuit Parameters of HBT Small-Signal Hybrid-Pi Model S. Bousnina, Fadhel M. Ghannouchi and R. Surridge* Ecole Polytechnique, Montreal PQ H3C 3A7 CANADA Tel: (514) 340 4711 ext 5989, Fax: (514) 340 5892. samibo-grmes.polymtl.ca * Nortel Networks 3500 Carling Avenue Nepean, ON K2H 8E9 Ottawa, CANADA ABSTRACT A novel and accurate method for

A Practical Method of Parameter Extraction for the VBIC Model used on a GaAs HBT. Morten Olavsbråten Norwegian Institute of Science and Technology (NTNU) Dept. of telecommunication, N-7491 Trondheim, Norway olavsbraten-ieee.org ABSTRACT This paper shows a simple practical method of extracting the major parameters in the VBIC model used on a GaAs HBT. The method was developed mainly for the circui