INTERCONNECTION BETWEEN THE PICOSECOND STIMULATED RECOMBINATION EMISSION AND THE KINETICS OF DENSE HOT ELECTRON-HOLE PLASMA IN GaAs N. N. Ageeva, I. L. Bronevoi, and A. N. Krivonosov Institute of Radioengineering and Electronics, Russian Academy of Sciences 103907, Moscow, GSP-3, Mokhovaya St., 11, Russia Fax: +7(095)-203-84-14, E-mail:bil-mail.cplire.ru High-speed optoelectronic effects, caused b

DECREASE OF MODFET CHANNEL CONDUCTIVITY WITH INCREASING SHEET ELECTRON CONCENTRATION J. Pozela, K. Pozela, V. Juciene Semiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania, pozela-uj.pfi.lt ABSTRACT The great decrease of electron mobility with increasing sheet electron concentration ns in modulation-doped AlGaAs/GaAs/AlGaAs quantum wells is observed. This effect is explained by

RESEARCHES OF TWO AND THREE-OUTPUT STRUCTURES WITH EFFECT OF RESONANT TUNNELING. A.A.Dorofeev, Yu.A.Matveev, AA.Chernavskii State Unitary Enterprise, Science & Production Enterprise "Pulsar", Science & Production Firm "Omega-SHF", Okruzhnoy proezd,27, Moscow,105127, Russia. E-mail: pulsar-dol.ru ABSTRACT The present paper is devoted to the development of production process of transistor structure

G AA S M IC RO WA V E O FF S E T G A T E S E LF- A L I G N ED M E SFE T s A N D TH E IR APP L I CA T IO NS V.G. Lap i n, A.M. T e mn o v, V. A. Kra s n i k, K.I. P e tro v Sta te R e s e a r c h a nd P r o d u c tio n Co r p o r a t io n " I s to k" , Vo kza l na y st r . 2 a , Fr ia z i n o , M o s ko w r e gio n, 1 4 1 1 2 0 R us s ia , e- mai l: i st ko r - el n et. ms k .r u. AB S T RA C T Th

MOLECULAR BEAM EPITAXY OF MODULATION DOPED N-AlGaAs/(InAs/GaAs)/GaAs SUPERLATTICES AT THIKNESS OF InAs LAYERS BELOW AND NEAR THRESHOLD OF NUCLEATION OF QUANTUM DOTS FOR HIGH FREQUENCY APPLICATIONS V.G.Mokerov, Yu.V.Fedorov, A.V.Hook, L.E.Velikoski Institute Radio Engineering and Electronic of RAS, Moscow, 103907, Russia Phone: 7(095) 203-15-35, E-mail: mok-mail.cplire.ru ABSTRACT Modulation doped

70 GHZ FMAX FULLY-DEPLETED SOI MOSFET'S FOR LOW-POWER WIRELESS APPLICATIONS C. Raynauda, O. Faynota, J.-L. Pelloiea, C. Tabonea, A. Grouilleta, F. Martina, G. Dambrineb, M. Vanmackelbergb, L. Pichetab, E. Mackowiakc, H. Brutc, P. Llinaresc, J. Sevenhansd, E. Compagnee, G. Fletcherf, D. Flandreg, V. Dessardg, D. Vanhoenackerg and J.-P. Rasking a Laboratoire d'Electronique de Technologie et d'Instr

MONOLITHIC INTEGRATION OF METAMORPHIC PIN DIODES AND HFETs FOR HETEROINTEGRATED MMICs Volker Ziegler, Christoph Gässler, Claus Wölk, Reinhard Deufel, Franz-Josef Berlec, Jürgen Dickmann, *Norbert Käb, *Hermann Schumacher DaimlerChrysler AG, Research Center Ulm, Wilhelm-Runge-Straße 11, D-89081 Ulm, Germany Phone: +49 731 505 2299 Fax: +49 731 505 4102 eMail: volker.z.ziegler-daimlerchrysler.com *D

Small signal and power performance of AlGaN/GaN HFETs grown on s.i. SiC A. Wieszt, R. Dietrich, J.-S. Lee, A. Vescan, H. Leier, E.L. Pinera, J.M. Redwingb H. Sledzikc DaimlerChrysler AG, Research and Technology, P.O. Box 2360, D-89013 Ulm, Germany phone:+49-731-505-2087 / fax: +49-731-505-4102 / email: andreas.wieszt-daimlerchrysler.com a b ATMI/Epitronics, 21002 N. 19th Ave., Phoenix, AZ 85027,

TECHNOLOGICAL AND GEOMETRICAL OPTIMISATION OF InP HBT DRIVER CIRCUIT N. Kauffmann, S. Blayac, P. André, M. Riet, J.-L. Benchimol, A. Konczykowska OPTO+, Groupement d'Intérêt Economique France Telecom R&D Route de Nozay, F-91461 Marcoussis Cedex agnieszka.konczykowska-optoplus.fr ABSTRACT The design of high speed circuits and optimization in function of technological and geometrical parameters are

Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications K.Shinohara1, Y. Yamashita2, K. Hikosaka2, N. Hirose1, M. Kiyokawa1, T. Matsui1, T. Mimura2, and S. Hiyamizu3 1 Communications Research Laboratory, Ministry of Posts and Telecommunications, 4-2-1 Nukuikitamachi, Koganei, Tokyo 184-0015, Japan 2 Fujitsu Limited, 10-1 Morinosato-