A balanced W-band HFET doubler H. Zirath, I. Angelov, N. Rorsman, C. Karlsson, and E. Kollberg Department of Microwave Technology, Chalmers Universityof Technology, 5-412 96 Goteborg, Sweden Abstract A new W-band balanced monolithic HFET doubler has been designed, fabricated and characterized. The doubler was simulated by linear analysis and a harmonic balance method. A new large signal HFET mode

HBT monolithic integrated phase locked oscillator for DCS 1800 mobile communications M Riet J 0 Plouchart, HWang, FRANCE TELECOM, Centre Notional d'Etude des Telecommunications, Paris B Laboratoire de Bagneux, 196 avenue Henri Ravera-BP 107 92225 Bagneux cedex FAX: 33 14746 04 17 Abstract An HBT MMIC has been designed and simulated. All the RF parts of a DCS 1800 frequency synthesizer have been

Wide band monolithic GaAs 55B modulator A. Boveda+, F.Ortigoso+, J.I. Alonso., J.C sanchez., F. Perez.. + AlcatelStandardElectrica,SA c/Einstein sin, TresContos 28760 Madrid, Spain, Tel:34 1 803 47 10; Fox: 34 1 80400 16; e-mail boveda-trescantos.seso.es T UniversidadPolitecnicade Madrid, * E.T.S.I. elecomunicacion. Madrid, Spain. Abstract A GaAs monolithic single-side-band up-converter designed

Broadband MMIC amplifier with active matching F. FOUQUET*,J.L. GAUTIER", D. PASQUET", c. JOSSE" * ESIGELEC, 1 rue du Morechol JUIN,BP14, 76131 MONT SAINT AIGNANCedex, FRANCE. TEL:1933 35528020. FAX.19 33 35528080. * * ENSEA,1 ollee des Chenes pourpres, 95014 CERGY PONTOISE Cedex, FRANCE.TEL.:1933 1 307366 66. FAX: 19 33 1 30 73 6667. Abstract This paper presents the simulation and measurement res

Iniection locked phase lock loop clock recovery circuit at 1.25 Gb/s J Y Un, X Zhang, A 5 Daryoush Center for Microwave/Lightwave Engineering, Drexel University, Philadelphia, PA 19104, USA. Tel: 12151895 2914, Fax (215) 895 4968 Abstract Future local area distribution networks will require optical interconnects between various processors or video distribution nodes, which operate in excess of gi

Low noise amplifier at L-and Ku-band for space applications in coplanar technology D. Leistner Deutsche Aerospace AG, Space Transportation and Propulsion Systems, D-81663 Munchen, Germany Telephone: +49-89-607-22296 Telefax: +49-89-607-27206 Abstract Miniaturized low noise amplifiers are designed and realized in the frequency range from 1.5 to 1.7 GHz and 13.0 to 15.0 GHz, using pseudomorphic Hig

Ku-band serrodyne frequency translator using wideband MMIC analogue phase shifters 5 Lucyszyn, Y Pilchen, I D Robertson, A H Aghvami *Communications Research Group, Dept of Electronic & Electrical Eng King's College, University of London, Strand, London, WC2R 2LS, England TEL.: +4471 8732390; FAX: +4471 8364781; e-mail: UDEE007-UK.AC.KCL.CC.OAK . Abstract A novel Ku-band serrodyne frequency tran

Large signal quantum-well Olga Boric-Lubecke, Dee-Son Pan and Tatsuo Itoh Department of Electrical Engineering, Eng IV, University of oscillator design California, LosAngeles,405 Hilgard Av., LosAngeles,CA 90024 Abstract Accurate characterization of the large signal device impedance is very important in the successful design of an oscillator. In this paper we present a simple calculation of a la

Dependency temperature of MESFET pinch-off voltage on J Rodriguez Tellez & B P Stothard Department of Electronic & Electrical Engineering University of Bradford, BRADFORD, West Yorkshire, BD7 IDP, UK TEL. +44274 384008; FAX +44274 391521 Abstract DC measurements at different temperatures on MESFET devices indicate that, as the drain current is reduced, the behaviour of the device becomes mor

Novel floating active inductor for MMIC circuits Guang Fei ZHANG and J.L. Gautier ENSEA, es chenes pourpres, 95014 Cergy-Pontoise cedex, L France. Abstract An active floating microwave inductor is proposed for general purpose use in microwave circuits. This active floating inductor realise broadband, high Q value and high inductance value. The novel feature of this circuit is that it can realise