Performance in R.F. power MOSFET's amplifier GSM radiotelephony. K. Kassmi, F. Oms, P. Rossel, H. Tranduc. lMS-CNRS, 7 Avenue du Colonel Roche, 31077, Toulouse Cedex, France, Tel: 3361 3362 00 (Fax 3361 3362 081 for Abstract With advantages like good power gain, high input impedance and thermal stability, power MOSFET's working in the GSM radiotelephony UHF channel become more and more serious c

EHicient development micromodules E.M. Bastida, G.P. Donzelli, c. Longari, M. Pagani, F. Rasa, L. Scopelliti Alcatel-Telettra,Via Trento 30, 20059 Vimercate (Mllltoly. Fax +39-39-6080891. Phone +39-39-6864257. of power FETs and Abstract High performance power FETs and micro modules are now produced at AIcatel-Telettra with high yields and low costs. For obtaining these results a very efficient d

Fundamental 26GHz YIG phase locked source M P Wilson, B Smith, and G Parkinson Ferranti International pic, First Avenue, Poynton, Stockport, Cheshire, UK, SK 12 1NE. Abstract A method of providing broad tuning range phase locked oscillatorsup to at least 26GHz has been developed,This has been possible because of two recent developments: an efficient high speed sampling phase detector and a thin

Application of BWO for excitation of intensive chaotic oscillations of millimeter wave band K.A. Lukin, V.A. Rakityansky Department of Nonlinear Dynamics of Electronic Systems, Instituteof Radiophysics & Electronics of the Ukrainian Academy of Science, 310085 Kharkov, 12 Acad. Proskura St., Ukrain. TEL.: +70572 448371; FAX +70572 441 105; e-mail: ire %i re. kharkov. ua-reloy.ussr.eu. net Abstract

Limitations of the even-mode structures F. TEMCAMANI, B. DELACRESSONNIERE, P. UDA & J.L. GAUTIER Ecole Nationale Cedex, FRANCE. Superieure de l'Electronique et de ses Applications reiection in diHerential IENSEAj 1, allee des chenes pourpres, 95014 Cergy - Pontoise Abstract Westudied even-moderejection of FET differential structures. The couplingadmittance appears as the essential factor.Weh

A very accurate 0-90omonolithic analog phase shifter for L-band mobile communications Christian Ripoll, Soren Nilsen° Laboratoire de Systemes Microelectroniques, ESIEE, 2 boulevard Blaise Pascal, 93160 Noisy Le Grand France 0 Institute of Electronics Systems, Aalborg University,Fredrik Bajers Vej 7 DK-9220 Aalborg 0 Denmark Abstract By choosing a phase shift greater than 90° in a vector modulator

A novel E-plane technology up and down converters M. Piloni, R. Grippa, R. Polli Siemens Telecomunicazioni S.pA 20060 Cassina de' Pecchi, Milan, Italy Phone +39 2 95259219; Fax +39 2 95259258; Telex 330346 for spaceborne mm-wave Abstract This paper describes the design of mmW up/down converters in E-plane configuration (fin line) using ceramic substrates soldered onto aluminium alloy waveguide

Mixers using superconducting . . resistive state H. Ekstromt, B. Karasik*, R. Weikle 11#, Nb films in the K.S. Yngvessontt, G. Gol'tsman*, E. Kollbergt and E. Gershenzon* tCholmers University of Technology, Goteborg, Sweden USA t tUniversity of Massachusetts, Amherst, Massachusetts, # University of Virginia, Charlottesville, VA., USA Moscow State Pedagogical University, Moscow, Russia * Abstra

9 GHz phase locked oscillator using a sampling phase detector. Application to VSATlocal oscillators (18-27GHz) Javier Gismero, Jesus Grajal Grupo de Microondas y Radar. E.T.S.I.Telecomunicacion Madrid. Ciudad Universitaria sin. 28040 Madrid Abstract This communication describes the design of a 9 GHz phaselocked oscillator (PLO) based on a Sampling Phase Detector (SPD). The use of this device avoi

A hybrid high-Tc superconductor with filter D. Drolett., s. Meszarost M.G. Stubbst, J.S. Wight. tCommunications Research Centre, 3701 Carling Ave., P. . Box O 11490 Station 'H', Ottawa, Canada Tel. 613-998-2826 Fax. 613-990-8369 K-band amplifier 'Carleton University, Dept. of Electronics, Ottawa, Canada Abstract This paper presents the design and performance of a hybrid semiconductor/superco