Proceedings of the 16th European Microwave Integrated Circuits Conference Large-Signal Modeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology Quang Huy Le?* , Dang Khoa Huynh?* , Anurag Nayak? , Steffen Lehmann# , Zhixing Zhao# , Thomas K¨ampfe? , Matthias Rudolph* ? Center Nanoelectronic Technologies, Fraunhofer IPMS, Dresden, Germany Chair of Radio Frequency and Micro

Proceedings of the 16th European Microwave Integrated Circuits Conference Automatic Nonlinear Nonquasi-Static Diode Model Extraction from Large-Signal Measurements A. Garc´?a-Luque#1 , T. M. Mart´?n-Guerrero#2 , A. Santarelli*3 , C. Camacho-Pe?nalosa#4 # Instituto Universitario de Investigaci´on en Telecomunicaci´on, Universidad de M´alaga-Andaluc´?a Tech, 29010 M´alaga, Spain of Electrical, Ele

Proceedings of the 16th European Microwave Integrated Circuits Conference Analog Linearization of a 10-W GaN Power Amplifier by Baseband Feedback Mathani Eltayeb#, Morten Olavsbråten*, Gian Piero Gibiino#, Alberto Santarelli# # Dept. Electrical, Electronic, and Information Engineering, University of Bologna, Italy * Norwegian University of Science and Technology (NTNU), Norway mathani.eltayeb-st

Proceedings of the 16th European Microwave Integrated Circuits Conference Efficient TCAD Temperature-dependent Large-Signal Simulation of a FinFET Power Amplifier E. Catoggio, S. Donati Guerrieri, F. Bonani, G. Ghione Dipartimento di Elettronica e Telecomunicazioni, Poltecnico di Torino, Italy {eva.catoggio, simona.donati, fabrizio.bonani, giovanni.ghione}-polito.it physical model, to model the

Proceedings of the 16th European Microwave Integrated Circuits Conference Intermodulation Products of a CMOS SP6T Antenna Switch: Results Comparison Between an Experimental Test-Bench and a Corresponding Simulated Virtual Test-Bench M. Ben-Sassi#, H. Saleh#, O. Sow#, I. Lahbib#, Greg D. U?Ren#, C. Hellepee*, D. Passerieux*, G. Neveux*, D. Barataud* # X-FAB, Corbeil-Essonnes, France XLIM-UMR CNRS

Proceedings of the 16th European Microwave Integrated Circuits Conference A 300 GHz Frequency Doubler in Transferred Substrate InP DHBT Technology Arsen Turhaner#1, Maruf Hossain*2, Mohamed Brahem*3, Tom K. Johansen#4 # Department of Electrical Engineering, Technical University of Denmark, Denmark Ferdinand Braun Institut (FBH), Leibniz Institut für Höchstfrequenztechnik, Germany {1aturh, 4tkj}-

Proceedings of the 16th European Microwave Integrated Circuits Conference Highly Linear D-Band Low-Noise Amplifier with 8.5dB Noise Figure in InP-DHBT Technology M. Hossain1, R. Doerner1, H. Yacoub1, T.K. Johansen2, W. Heinrich1, V. Krozer1 1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Germany 2 Technical University of Denmark (DTU), Denmark maruf.hossain-fbh-berl

Proceedings of the 16th European Microwave Integrated Circuits Conference A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology M. Hossain1, T. Shivan1, R. Doerner1, S. Seifert1, H. Yacoub1, T.K. Johansen2, W. Heinrich1, V. Krozer1 1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Germany 2 Technical University of Denmark (DTU), D

Proceedings of the 16th European Microwave Integrated Circuits Conference A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT Technology Janis W¨ormann#1 , Aleksey Dyskin* , S´ebastien Chartier # ? , and Ingmar Kallfass#2 # Institute of Robust Power Semiconductor Systems (ILH), University of Stuttgart, Stuttgart, Germany of Electrical Engineering, Technion-Israel Institute of Techno

Proceedings of the 16th European Microwave Integrated Circuits Conference A 41.5 dBm Broadband AlGaN/GaN HEMT Balanced Power Amplifier at K-Band S. Samis*, C. Friesicke+, T. Maier+, R. Quay+, A.F. Jacob* * Institute of High-Frequency Technology, Hamburg University of Technology, Germany + Fraunhofer Institute for Applied Solid State Physics (IAF), Germany stanislav.samis-tuhh.de Abstract ? This