Proceedings of the 16th European Microwave Integrated Circuits Conference An S-band 34dBm Stacked-HBT Phase Driver in 0.25?m BiCMOS Technology for GaN-Based Phased-Array Radar Transmit Chain J. Essing1, A. Bossuet, R. Knight2, A.P. de Hek3, F.E. van Vliet4 TNO, the Hague, the Netherlands { jaap.essing, rob.knight, 3peter.dehek, 4frank.vanvliet}-tno.nl 1 2 Abstract ? This paper describes an inte

Proceedings of the 16th European Microwave Integrated Circuits Conference Engineered High Resistivity Silicon Substrates in IPD Technology Used for Miniaturized sub-6 GHz Filters Atte Haapalinna#1, Heikki Holmberg#, Arto Hujanen$2, Katja Parkkinen#, Pekka Rantakari$, Jan Saijets$, Tauno Vähä-Heikkilä$ # Okmetic Oy, P.O. Box 44, FI-01301 Vantaa, Finland $ VTT Technical Research Center of Finland,

Proceedings of the 16th European Microwave Integrated Circuits Conference A 100 GHz Class-F-Like InP-DHBT PA with 25.4% PAE Amit Shrestha1, Ralf Doerner1, Hady Yacoub1, Tom K. Johansen2, Wolfgang Heinrich1, Viktor Krozer1, Matthias Rudolph1,3, Andreas Wentzel 1 1 Ferdinand-Braun-Institut gGmbH, Berlin, Germany Technical University of Denmark (DTU), Kgs. Lyngby, Denmark 3 Ulrich L. Rohde Chair of

Proceedings of the 16th European Microwave Integrated Circuits Conference 140 GHz Differential Antennas in Embedded Wafer Level Ball Grid Array Technology Akanksha Bhutani, Elizabeth Bekker, Teng Li, Lucas Giroto de Oliveira, Thomas Zwick Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Germany akanksha.bhutani-kit.edu, elizabeth.bekker-kit.edu [2] is

Proceedings of the 16th European Microwave Integrated Circuits Conference A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry Process Robert Malmqvist#1, Rolf Jonsson#2, Mingquan Bao*3, Rémy LeBlanc£4, Koen Buisman?5, Christian Fager?6, Kristoffer Andersson*7 # Swedish Defence Research Agency (FOI), Sweden * Ericsson Research, Ericsson AB, Sweden £ OMMIC S.A.S., France ? Chalmers Uni

Proceedings of the 16th European Microwave Integrated Circuits Conference Glass-Integrated Single- and Dual-Band Bandpass Filters Andrea Ashley, Dimitra Psychogiou Dpt. of Electrical, Computer, and Energy Engineering, University of Colorado Boulder, USA andrea.ashley-colorado.edu, dimitra.psychogiou-colorado.edu Abstract?A new class of bandpass filters (BPFs) using a commercially available glass

Proceedings of the 16th European Microwave Integrated Circuits Conference Two-Element 81-86 GHz SiGe Transmitter Beamformer for Backhaul Applications Roee Ben Yishay, Oded Katz, Danny Elad ON Semiconductor, Image Sensor Group, Haifa, Israel roee.ben-yishay-onsemi.com Abstract ? This paper presents the design and characterization of a two-element 81-86 GHz phased-array beamformer in SiGe BiCMOS f

Proceedings of the 16th European Microwave Integrated Circuits Conference A 47-50 GHz 3 W MMIC Power Amplifier Using 100 nm Gallium Nitride Technology Seifeddine Fakhfakh# , Guillaume Callet# , Estelle Byk # , Laurent Favede# , Aleksandra Malko* , Sandra Riedmueller* , Pierre Denis * , Herv´e Blanck* , Marc Camiade# # United * United Monolithic Semiconductors SAS, France Monolithic Semiconductor

Proceedings of the 16th European Microwave Integrated Circuits Conference 1-6 GHz 35W Balanced GaN-HEMT Power Amplifier with Innovative Quadrature Couplers Alexey Radchenko1, Sergey Garmash2, Andrei Kishchinsky3 1 Microwave Systems JSC, Moscow, Russia ar-mwsystems.ru, 2sg-mwsystems.ru, 3ak-mwsystems.ru Abstract ? This paper presents a 1 ? 6 GHz, 35 W high efficiency GaN-HEMT balanced power ampl

Proceedings of the 16th European Microwave Integrated Circuits Conference Benefits of AlGaN/GAN thermal ROM coupling with industrial non-linear transistor model C. Chang, L. Brunel United Monolithic Semiconductors SAS, France {christophe.chang, laurent.brunel}-ums-rf.com processes. GH15-10 key parameters are summarized in the Table 1. UMS foundry provides a complete Design Kit available on Keysi