Proceedings of the 16th European Microwave Integrated Circuits Conference 400-Watt S-band Power Amplifier MMIC A.P. de Hek1, G. van der Bent2, F.E. van Vliet3 TNO, The Hague, The Netherlands {1peter.dehek, 2gijs.vanderbent, 3frank.vanvliet}-tno.nl Abstract ? A state-of-the-art, second harmonically tuned, 400 W S-band MMIC power amplifier has been developed. This amplifier delivers in the 2.8 ? 3

Proceedings of the 16th European Microwave Integrated Circuits Conference A Derating-Rules Compliant Ka-Band GaN-on-Si Power Amplifier Designed for Highly Reliable Satellite Applications F. Costanzo#, L. Pace#, P.E. Longhi#1, W. Ciccognani#, S. Colangeli#, R. Leblanc*, E. Limiti# # Electronic Engineering Dept. University of Rome ?Tor Vergata?, Rome, Italy * OMMIC SAS, Limeil Brèvannes, France 1

Proceedings of the 16th European Microwave Integrated Circuits Conference 30-46 GHz 1.5dB IL Negative Gate Control SPDT with 24.5dBm IP1 in 130nm CMOS Sumeet Londhe1, Noam Bar-Helmer2, Samuel Jameson2, and Eran Socher1 1 School of Electrical Engineering, Tel Aviv University, Israel 2 Rafael, Israel Abstract?In this paper a novel way of improving IP1 of SPDT switches is presented. IP1 of a SPDT

Proceedings of the 16th European Microwave Integrated Circuits Conference SAW Resonator Band-Pass Filter on GaN/Si operating at 8 GHz Alina-Cristina Bunea#, Dan Neculoiu*#, Adrian Dinescu# # National Institute of R&D in Microtechnologies (IMT) Bucharest, 077190, Romania * ?Politehnica? University of Bucharest, 060042, Romania 1 alina.bunea-imt.ro with active components such as High Electron Mob

Proceedings of the 16th European Microwave Integrated Circuits Conference 120 GBd SiGe-Based 2:1 Analog Multiplexer Module for Ultra-Broadband Transmission Systems C. Schmidt#1, T. Tannert*, J.H. Choi#, C. Caspar#, D. Pech#, S. Wünsch#, G. Ropers#, J. Schostak#, V. Jungnickel#, R. Freund#, M. Grözing*, M. Berroth* # Fraunhofer Heinrich-Hertz-Institute, Berlin, Germany * University of Stuttgart,

Proceedings of the 16th European Microwave Integrated Circuits Conference A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology Victor Fiorese1,2, Joao Carlos Azevedo Goncalves1, Simon Bouvot1, Emmanuel Dubois2, Christophe Gaquiere2, Guillaume Ducournau2, François Danneville2, Sylvie Lépilliet2 & Daniel Gloria1 1 2 STMicroelectronics, France IEMN ? Institu

Proceedings of the 16th European Microwave Integrated Circuits Conference Adopting Supercapacitors in a Single-Stage Marx-Type Multilevel Supply Modulator Lukas H¨ussen1 , Renato Negra Chair of High Frequency Electronics, RWTH Aachen University, Germany 1 lukas.huessen-hfe.rwth-aachen.de Abstract ? Multilevel supply modulation has gained interest in recent years because of the prospect of high p

Proceedings of the 16th European Microwave Integrated Circuits Conference A highly linear 79 GHz Low-Noise Ampli?er for Civil-Automotive Radars in 22 nm FD-SOI CMOS with -6 dBm iP1dB and 5 dB NF Songhui Li#1 , David Fritsche# , Laszlo Szilagyi# , Xin Xu# , Quang Huy Le* , Defu Wang* , Thomas K¨ampfe* , Corrado Carta# , Frank Ellinger#,$ # Chair for Circuit Design and Network Theory, TU Dresden,

Proceedings of the 16th European Microwave Integrated Circuits Conference 37.2-to-42.0 GHz VCO with -93.4 dBc/Hz Phase Noise for FMCW Radar in 22 nm FDSOI Laszlo Szilagyi*#1 , Songhui Li# , Xin Xu# , Paolo Valerio Testa*# , Andres Seidel# , Corrado Carta# , Frank Ellinger#$ * GLOBALFOUNDRIES, Dresden, Germany Universit¨at Dresden, Germany $ CeTi, Centrum for Tactile Internet, Dresden, Germany 1

Proceedings of the 16th European Microwave Integrated Circuits Conference Practical Work for Master2 Students: MMIC Distributed Amplifier Design for High Data Rate Receiver on GaAs-UMS Technology C. Algani#1, E. Leclerc*2 # ESYCOM, Univ. Gustave Eiffel, CNRS, Le Cnam F-75003 Paris, France * UMS, 91140 Villebon-sur-Yvette, France 1 Catherine.algani-lecnam.net, 2Eric.Leclerc-ums-rf.com Abstract ?