Proceedings of the 16th European Microwave Integrated Circuits Conference Doherty Load Modulation Based on Non-Reciprocity Paul Saad#1 , Han Zhou*2 , Jose-Ramon Perez-Cisneros*3 , Rui Hou#4 , Christian Fager*5 , Bo Berglund#6 # Ericsson AB, 164 80 Stockholm, Sweden University of Technology, 412 96 Gothenburg, Sweden {1 paul.saad, 4 rui.hou,6 bo.g.berglund}-ericsson.com, {2 han.zhou, 3 jospere,5

Proceedings of the 16th European Microwave Integrated Circuits Conference C-Band Low-Noise Amplifier MMIC with an Average Noise Temperature of 44.5 K and 24.8 mW Power Consumption Felix Heinz1 , Fabian Thome, Arnulf Leuther, Oliver Ambacher Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Germany 1 felix.heinz-iaf.fraunhofer.de Abstract ? This paper reports on a 4 ? 8 GHz (C

Proceedings of the 16th European Microwave Integrated Circuits Conference Microwave sensing using metal-insulator-metal diodes based on 4-nm-thick hafnium oxide Martino Aldrigo# , Mircea Dragoman# , Sergiu Iordanescu# , Mazen Al Shanawani* , George Deligeorgis$ # IMT-Bucharest, L4, Voluntari (Ilfov), Romania DEI, Faculty of Engineering, University of Bologna, Bologna, Italy $ Foundation for Rese

Proceedings of the 16th European Microwave Integrated Circuits Conference 17.6 dB Variable-Gain and Variable-Bandwidth Upconverter in 65 nm CMOS for 60 GHz Bands Oner Hanay, David Bierbuesse, Renato Negra Chair of High Frequency Electronics, RWTH-Aaachen University, Germany {oner.hanay, david.bierbuesse, rnegra}-hfe.rwth-aachen.de RF Abstract ? This paper presents a variable-gain and variable-b

Proceedings of the 16th European Microwave Integrated Circuits Conference A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT S. Khandelwal#^ , K. Kikuchi* , H. Yamamoto* # University of South Florida, Tampa, USA University, Sydney, Australia * Sumitomo Electric Industries Ltd., Tokyo, Japan sourabh.khandelwal-mq.edu.au ^ Macquarie Abstract ? An accura

Proceedings of the 16th European Microwave Integrated Circuits Conference Field-Plate Mixer Simon J. Mahon, Michael C. Heimlich Macquarie University, NSW 2109, Australia simon.mahon-mq.edu.au process used here, one end is open-circuited and the other connected to the FET?s source metal as illustrated in Fig. 1. Abstract ? A novel GaN FET field-plate mixer is presented. The local oscillator (LO)

Proceedings of the 51st European Microwave Conference Additively Manufactured Electronic (AME) Devices for mmWave Applications Jaim Nulman Nano Dimension, USA Abstract?Additively Manufactured Electronics (AME) devices and circuits are emerging as a bridge between PCB and ICs enabling the extension of More?s Law as well as improved performance of RF devices. AME technology being a 100% digital and

Proceedings of the 51st European Microwave Conference Space Qualified Additive Manufacturing for RF Components Esteban Menargues SWISSto12, Switzerland Abstract?In the last years, the interest of the space industry in 3D printed (aka Additive Manufacturing) RF components has significantly increased. The advantages of such manufacturing technology are reduced lead-time, light weight, design freedo

Proceedings of the 51st European Microwave Conference Metamaterial Inspired Geometries for Wireless Power Transfer to Biomedical Implants Ramesh Pokharel#, Adel Barakat#, Costas Sarris* # Kyushu University, Japan University of Toronto, Canada {pokharel, barakat}-ed.kyushu-u.ac.jp, costas.sarris-utoronto.ca * Abstract?Wireless charging of biomedical implants will make the life of patients with i

Proceedings of the 51st European Microwave Conference A 6---18GHz 13W and 22% PAE GaN Power Chipset Mehdi Dinari, Benoît Mallet-Guy, Yves Mancuso Thales DMS France SAS, France {mehdi.dinari, benoit.mallet-guy, yves.mancuso}-fr.thalesgroup.com Abstract?This paper presents the measurement results of a wideband power chipset designed for defence applications and in the frame of the EDA MUSTANG progr