PSEUDOMORPHIC AlGaAs/GalnAs HETERO-FET STRUCTURES FOR LOW NOISE AND POWER APPLICATIONS
Narozny P., Dämbkes H., Dickmann J., Wölk C., Adam D., Barbier E., Pons D.
PSEUDOMORPHIC AIGaAs/GalnAs HETERO-FET FOR LOW NOISE AND POWER APPLICATIONS
P. Narozny * , H. Dambkes * , J. Dickmann,* C. Wolk * ** ** D. Adam, E. Barbier, D. Pons**
STRUCTURES
ABSTRACT PM HFET based devices and circuits on GaAs substrates are developed for the low noise and for the power components of 20 GHz to 30 GHz communication links. Cut off frequencies in excess of 200 GHz, minimum noise