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THE DEVELOPMENT OF A FLAT PLATE ANTENNA FOR MILLIMEMETER-WAVE VIDEO RECEPTION
Miller P.A., Rose I.G., Staker M.R.
'!HE IEVErDImNr .l
SLOTLINE ANTENNAS FOR MILLIMETER AND SUBMILLIMETER WAVELENGTHS
Acharya P.R., Johansson J.F., Kollberg E.L.
SLOTLINE ANTENNAS FOR MILLIMETER AND SUB MILLIMETER Pranay Raj Acharyat, ABSTRACf WAVELENGTHS and Erik L. Kollbergt Joakim F. Johansson*, Two types of tapered slotline antennas (TSA) have been studied. One type, which requires a fairly thin substrate, gives a radiation pattern of high gaussicity. For submillimeter wavelengths, where the substrate is difficult to thin down, a sandwich type with
PHASE PATTERN AND PHASE CENTER MEASUREMENTS OF ANTENNAS AT 105-190 GHz WITH A NOVEL DIFFERENTIAL PHASE METHOD
Lehto A., Tuovinen J., Räisänen A.
PHASE PATTERN AND PHASE CENTER MEASUREMENTS ANTENNAS AT 105-190 GHz WITH A NOVEL DIFFERENTIAL METHOD A Lehto, J Tuovinen, ABSTRACT A Ra.isanen OF PHASE * Application of conventional antenna phase measurement methods becomes increasingly difficult above 100 GHz. Main problems are the complexity of measurement set-ups and errors caused by the flexible cables or rotary joints needed in the system.
PHASE-RETRIEVAL FAR-FIELD PATTERN PREDICTION AND METROLOGY OF A MM-WAVE REFLECTOR ANTENNA FROM A PLANAR NEAR-FIELD INTENSITY SCAN
Junkin G., Anderson A.P., Cheung Y.D.
PHASE-RETRIEVAL FAR-FIELD REFLECTOR ANTENNA FROM G Junkin, ABSTRACT A.P. Anderson PATTERN PREDICTION A PLANAR NEAR-FIELD AND METROLOGY INTENSITY SCAN OF AMM-WAVE and Y.D. Cheung' With trends towards utilisation of millimetre wavelengths, the metrology of reflector antennas via holographic-based techniques will be expensive, and perhaps unreliable, because of the requirement for a phase refere
A 14 GBIT/s MULTIPLEXER IN A 1m SILICON BIPOLAR TECHNOLOGY
Felder A., Weger P., Hartwig D.
A 14 GBIT/s MULTIPLEXER IN A 1~m SIliCON BIPOLAR TECHNOLOGY A. Felder' 1 2) P. Weger' 1 2) D. Hartwig . 2) ABSTRACT A 2:1 multiplexer technology, (MUX) has been and realised in a 1 µm self-aligned silicon bipolar data rate of 14 GBit/s. mW with a 5 V The chip meathe ausupply. To operating with a maximum sures 0.42 x 0.42 mm2 thors' knowledge, in silicon. dissipates 280 this is the high
LOW-DIMENSIONAL CONDUCTORS IN MICROWAVE ELECTRONICS
VENDIK I.B., OSIPYAN G.L., PCHELKIN V.M., SHCHEPAK A.V.
LOW-DI MENSI aNAL CONDUCTORS IN MI CROWAVE I.B.VENDIK. ABSTRACT G.L.OSIPYAN. V.M.PCHELKIN. ELECTRONI CS A.V.SHCHEPAK Low dimensional conductors (LDC) showing a strong anisotropy of crystal structure and electron properties are characterized by the Peierls metal-insulator transition accompanied by charge density wave (CDW) conductivity properties: conductivity. of formation. The CDW contribut
A 9 TO 18 GHz SMALL SIZE HYBRID BROADBAND VCO USING ACTIVE MATCH CIRCUITS
KIMISHIMA M., ITO Y.
A 9 TO 18 GHz SMALL SIZE HYBRID BROADBAND VCO USING ACTIVE MATCH CIRCUITS Masayuki KIMISHIMA* and Yasushi ITO* ABSTRACT A 9 to 18 GHz broadband voltage controlled oscillator using active match circuits ("active match VCO") has been designed and fabricated in hybrid form. The active match VCO has several advantages over conventional broadband VCO's, including wider frequency coverage, smaller outpu
A MEMORY CONTROLLED FEEDFORWARD LINEARIZER SUITABLE FOR MMIC IMPLEMENTATION.
Kumar S., Wells G.
A MEMORY CONTROLLED FEEDFORWARD LINEARIZER SUITABLE FOR MMIC IMPLEMENTATION. Surinder Kumar*, Garth Wells* .~B §..T.~.~.9..T. This paper presents the design considerations feedforward linearizer. The linearizer is for a microstrip suitabl e for MMIC implementation and can be adjusted using a memory circuit. A wide operating frequency, input level and temperature range is, therefore, feasible.
PAMELA - A NEW METHODE FOR LINEAR AND EFFICIENT POWER AMPLIFICATION
Kohl R., Bätz O.
PAMELA - A NEW METHODE AMPLIFICATION FOR LINEAR AND EFFICIENT POWER R. Kohl* O. Batz* ABSTRACT PAMELA stands for Power Amplifier Module for highly Efficient and highly Linear Applications. It utilizes an adaptive loading technique developed by MBB. This paper describes the PAMELA principle, presents the outstanding performance features in comparison with conventional amplifier con
C-BAND HIGH EFFICIENCY GaAs FET AMPLIFIER WITH 17.4W OUTPUT POWER
IKEDA Y., TAKAGI T., IGI S., HIROSE H., URASAKI S.
C-BAND HIGH EFFICIENCY GaAs FET AMPLIFIER WITH 17.4W OUTPUT POWER Yukio IKEDA*. Tadashi TAKAGI*. Sigeo IGI**. Haruzo HIROSE*** Syuji URASAKI* ABSTRACT C-band high efficiency GaAs FET amplifier has been developed for space-craft applications. Power added efficiency 48% is obtained with output power 17.4W and linear gain 11.6dB over 3.7-4.2GHz. This amplifier consists of 4 FET chips and each output
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