Proceedings of the 21st European Microwave Integrated Circuits Conference Scalable Small-Signal Modeling of 20-nm InGaAs HEMTs Using a DC-Biased Backside Field Plate Maxime Moulin, Sayed Ali Albahrani, Felix Heinz, Meike Schauerte, Arnulf Leuther Fraunhofer Institute for Applied Solid State Physics IAF, Germany maxime.moulin-iaf.fraunhofer.de electric field and improve BV [4]. In InGaAs HEMTs, t

Proceedings of the 21st European Microwave Integrated Circuits Conference Coupled TCAD and 3D ANSYS Thermal Simulation for Hotspot Analysis in GaN HEMTs 1 2 1 1 Mohammed Boussekri , Vaidehi Vijay Painter , Raphael Sommet , Jean-Christophe Nallatamby , 2 P. Vigneshwara Raja 1 2 Xlim Laboratory, CNRS UMR 7252, University of Limoges, France Department of EECE, Indian Institute of Technology Dha

Proceedings of the 21st European Microwave Integrated Circuits Conference A 113?143 GHz Wideband Power Amplifier in 28nm CMOS Featuring 22.2% Fractional Bandwidth for Sub-THz Applications Ting-Yu Chang#1, En-Lin Hong#2, Kai-Jie Chuang#, Yi-Wen Wang#, Jeng-Han Tsai$, Tian-Wei Huang#3 # Graduate Institute of Communication Engineering, National Taiwan University, Taiwan $ Department of Electrical E

Proceedings of the 21st European Microwave Integrated Circuits Conference A D-Band SiGe Power Ampli?er with a Coupled Line-Based Four-Way Power Combiner ?Ibrahim Ka?gan Aksoyak#$ , Henning Poensgen$ , Ahmet Ça?gr? Ulusoy$ # $ Texas Instruments, USA Institute of Radio Frequency Engineering and Electronics (IHE), Karlsruhe Institute of Technology, Germany i-aksoyak-ti.com, {henning.poensgen, cagr

Proceedings of the 21st European Microwave Integrated Circuits Conference 1.3-W, 59%-Efficient K-band Rectifier MMICs using Cost-Effective Schottky Barrier Diodes Kengo Sumiya, Keiichi Sakuno, Shinji Hara, Noriyuki Tanba, Yasuhisa Ushida Institute of Materials and Systems for Sustainability, Nagoya University, Japan {kengo.sumiya, sakuno.keiichi, shinjihara, n_tanba, y.ushida}-imass.nagoya-u.ac.j

Proceedings of the 21st European Microwave Integrated Circuits Conference Cryogenic Characterization of a Ka-Band GaN-Based LNA at Ka-band Frequencies Jiun-Jie Huang#1, Heng-Tung Hsu*2, Yi-Fan Tsao#3, Yi-Chia Cheng^4 # Industry Academia Innovation School, Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University, Taiwan * Department of Microelectronics, National Yan

Proceedings of the 21st European Microwave Integrated Circuits Conference A Q-band Analog Linearizer MMIC with Independent Third-Order Intermodulation Control and Tunable Delay Elements # # # # # * Burak G. Özat , Mathias P. Scharpf , Marc Günter , Mark J. Neff , Benjamin Schoch , Stefan Koch , Ingmar Kallfass # # Institute of Robust Power Semiconductor Systems (ILH), University of Stutt

Proceedings of the 21st European Microwave Integrated Circuits Conference Air-Filled Substrate Integrated Waveguide Structures in 3D Integrated Technology for D-band Applications # # # $ ^ ^ ^ Hajar Zidane , Christopher Pouzou , Jordan Corsi , Loïc Vincent , Victor Milon , Cédric Durand , Pascal Chevalier , ^ * * # # Daniel Gloria , Christophe Dubarry , Olivier Valorge , Jean-Daniel Arnoul

Proceedings of the 21st European Microwave Integrated Circuits Conference A 0.2~2.28 GHz Reconfigurable 2nd order Analog SR LPF with a Tripartite Mapping Using 40-nm Bulk CMOS Technology Xu Cheng12, Zhuoheng Chen12, Yun Fang3, Xianhu Luo12, Liang Zhang12, Jiangan Han12, Yunbo Rao12, Meng Jia12, Shangxuan Chen12, Bo Wei4, Xianjin Deng12, Hao Gao536 1 Microsystems&Terahertz Research Center, CAEP,

Proceedings of the 21st European Microwave Integrated Circuits Conference A Rugged 40 V 0.12-?m GaN HEMT Technology Platform for Single Chip RF Front-Ends Jung-Tao Chung#^, Pei-Ying Wu#^, Ju-Hsien Lin#, Yu-Syuan Lin#, Zong-Yu Lin#, Yun-Shiuan Li#, Chien-Rong Yu#, Shou-Hsien Weng#, Shuan-Ming Li#, Shao-Chang Cheng#, Wei-Chou Wang#, Keiichi Matsushita#, Cheng-Kuo Lin#$ # WIN Semiconductors, Taiwan