Proceedings of the 21st European Microwave Integrated Circuits Conference A 220 to 330 GHz Dual-IF Receiver-Chip in 35-nm mHEMT Technology Rainer Weber, Fabian Thome, Sandrine Wagner, Axel Tessmann, Arnulf Leuther Fraunhofer Institute for Applied Solid State Physics IAF, Germany rainer.weber-iaf.fraunhofer.de transconductance > 2500 mS/mm, fT ? 550 GHz, and fmax > 1 THz. More details of the proce

Proceedings of the 21st European Microwave Integrated Circuits Conference A Compact Band-Selectable Bi-Directional Coupler With an Integrated Wi-Fi Filter in RF SOI CMOS Ting-Li Hsu# , Valentyn Solomko* , Amelie Hagelauer#$ # Chair of Micro and Nanosystems Technology, Technical University of Munich, Germany * Infineon Technologies AG, Germany $ Fraunhofer EMFT Institute for Electronic Microsyste

Proceedings of the 21st European Microwave Integrated Circuits Conference An 18.5 GS/s Single-Core Flash ADC with Back-Gate Offset Calibration Obtaining 28.8 dB SNDR at 37.2 GHz Input Frequency in 22 nm FD-SOI Nima Lotfi, Philipp Scholz, Friedel Gerfers Chair of Mixed-Signal Circuit Design, Technische Universität Berlin, Germany nima.lotfi-tu-berlin.de Abstract ? This work presents the design, i

Proceedings of the 21st European Microwave Integrated Circuits Conference A QFN-packaged 6.4?8.4 GHz SiGe BiCMOS PA for 5G-Adv/6G with 30 dBm PSAT and 37.5% PAE #$ $ $ $ # Davide Pecile , Alberto Gambarucci , Stefan Kokorovic , Luigi Marzocchella , Andrea Bevilacqua # University of Padova, Italy Infineon Technologies, Austria davide.pecile-EE2-infineon.com $ This work addresses the limitat

Proceedings of the 21st European Microwave Integrated Circuits Conference A High-Efficiency Doherty Power Amplifier with Enhanced Back-Off Performance Mahdi Aliyari#, Vahid Nayyeri$, Ahmad Ayatollahi#, Sayyed-Hossein Javid-Hosseini$, Paolo Colantonio* # School of Electrical Engineering, Iran University of Science and Technology, Iran School of Advanced Technologies, Iran University of Science an

Proceedings of the 21st European Microwave Integrated Circuits Conference Broadband SiGe D-Band Quadrupler with Class-F Bootstrapping Caitlinn R. Ellis , Yaw A. Mensah, Christopher R. Snyder, Joseph A. Caezza, John D. Cressler Georgia Institute of Technology, USA cellis71-gatech.edu from resonance, the impedance drops, base voltage decreases, and conversion gain degrades, limiting the achievable

Proceedings of the 21st European Microwave Integrated Circuits Conference Wideband W-Band 55?nm SiGe LNA Design Using Low-Q Cells for Multi-Standard Link and Metrology Applications V. Danelon1, P. Garcia1, L. Vincent2, L. Boukhezar13, P. Ferrari3 1 STMicroelectronics, France Univ. Grenoble Alpes, Grenoble INP, CIME Nanotech, France 3 Univ. Grenoble Alpes, Grenoble INP, CNRS TIMA UMR 5159, France

Proceedings of the 21st European Microwave Integrated Circuits Conference Extended D-Band Frequency Quadrupler based on Harmonic Source- and Load-Pull Measurements Eric Sigle, Fabian Thome, Arnulf Leuther, R¨udiger Quay Fraunhofer Institute for Applied Solid State Physics IAF, Germany Eric.Sigle-iaf.fraunhofer.de Abstract ? This paper presents a frequency quadrupler achieving extended D-Band (11

Proceedings of the 21st European Microwave Integrated Circuits Conference A Concurrent D-Band Radar and O-Band Lidar FMCW Receiver in 45-nm CMOS-Photonics Alex Dinkelacker, Zachery Bloom, Xinhong Du, Rittik Mitra, Clint Schow, James F. Buckwalter Department of Electrical and Computer Engineering, University of California Santa Barbara, USA alexanderdinkelacker-ucsb.edu Abstract ? A frequency-mod

Proceedings of the 21st European Microwave Integrated Circuits Conference Extended W-band Low-Noise Amplifiers in 35-nm Metamorphic High-Electron-Mobility Transistor Technology Felix Heinz, Arnulf Leuther, Fabian Thome Fraunhofer Institute for Applied Solid State Physics IAF, Germany felix.heinz-iaf.fraunhofer.de Abstract ? This paper reports on the design and measurement of extended W-band (75