Proceedings of the 19th European Microwave Integrated Circuits Conference Pseudo-vertical GaN-on-Sapphire PiN Diode: Process Optimizations and Electrical Properties Zihao Lyu#, Jérôme Billoué#, Kevin Nadaud#, Julien Ladroue^, Quentin Paoli#^, Arnaud Yvon^, Eric Frayssinet*, Yvon Cordier*, Daniel Alquier# # GREMAN, UMR 7347, Université de Tours, CNRS, INSA Centre Val de Loire, France ^ STMicroele

Proceedings of the 19th European Microwave Integrated Circuits Conference High-Efficiency 24-GHz Rectifier MMICs using Schottky Barrier Diodes from Foundry Shinji Hara1, Keiichi Sakuno2, Kengo Sumiya3, Noriyuki Tanba4, Yasuhisa Ushida5 Institute of Materials and Systems for Sustainability, Nagoya University, Japan {1shinjihara, 2sakuno.keiichi, 3kengo.sumiya, 4n_tanba, 5y.ushida}-imass.nagoya-u.a

Proceedings of the 19th European Microwave Integrated Circuits Conference A new 45nm RFSOI Technology Optimized for Low Power, High Performance mmWave Applications Sameer H. Jain#, R. Mullapudi#, K. Shanbhag#, T. Ethirajan#, Y. Hu#, Y. Li#, T. Chowdhury#, P. Srinivasan#, I. Das+, O. H. Gonzales#, T. Kauerauf#, Z. Al-Husseini$, H. K. Kakara+, K. Bantupalli+, J. Lee#, T.-Y. Lin#, E. Veeramani#, H.

Proceedings of the 19th European Microwave Integrated Circuits Conference GaN FET Current Change and Recovery During and After Gamma Radiation Evan S. Shelley, Mohamed N. Ahmed, Nicola V. Lubczyk, Andrew L. Parker, Anthony E. Parker, Simon J. Mahon, Melissa C. Gorman Macquarie Analog Devices Laboratory, Macquarie University, Australia simon.mahon-mq.edu.au The next section describes the measureme

Proceedings of the 19th European Microwave Integrated Circuits Conference A Stacked MOSFET-Based RF Switch with High DC Voltage Handling Capabilities Valentyn Solomko#1 , Ting-Li Hsu*2 , Semen Syroiezhin#3 , Amelie Hagelauer*$4 # Radio Frequency and Sensors, Infineon Technologies AG, Germany Chair of Micro and Nanosystems Technology, Technical University of Munich, Germany $ Fraunhofer EMFT Inst

Proceedings of the 19th European Microwave Integrated Circuits Conference SiGe HBT integrated in a 22 nm FDSOI H. Mulaosmanovic#, H. S. Chen#, A. Derrickson$, A.-S. Seidel#, A. Zeun#, V. Paredes-Saez#, C. Reichel#, F. Koch#, K. Li#, A. Hellmich#, S. Müller#, R. Hüselitz#, H. Freund#, A. Ott#, V. Jaschke#, F. Grossmann#, F. Köhler#, S. Diessner#, M. Zier#, L. Fürst#, M. Ruhm#, A. Dietel#, S. Lehma

Proceedings of the 19th European Microwave Integrated Circuits Conference Prediction of the Large-Signal GaN HEMT Performance Using Accurate TCAD-Compact Modeling Method Christos Zervos#1 , Petros Beleniotis#2 , Matthias Rudolph#$ # Brandenburg University of Technology Cottbus-Senftenberg (BTU), Germany $ Ferdinand-Braun-Institut (FBH), Germany {1 zervos, 2 petros.beleniotis}-b-tu.de Abstract ?

Proceedings of the 19th European Microwave Integrated Circuits Conference A Ka-Band Reconfigurable Output Power PA MMIC Charles F. Campbell Qorvo, HPA Research, USA Charles.campbell-qorvo.com Another amplitude tapering approach would be to reduce the drain voltage of the highest power PA with a buck converter. This will reduce output power but forces the system to alter the high power side bias v

Proceedings of the 19th European Microwave Integrated Circuits Conference A 0.5W <3dB IL DC-67GHz SPDT Switch in 16nm FinFET with Local Substrate Floating Technique Yuqi Liu , Hua Wang # IDEAS Group, ETH Zürich, Switzerland { yuqliu, hua.wang}-iis.ee.ethz.ch Abstract ? This paper presents a low-loss broadband SPDT T/R switch with <3dB insertion loss, >22dB isolation, and half-watt input 1dB com

Proceedings of the 19th European Microwave Integrated Circuits Conference Full D-Band GaN Power Amplifier MMIC and Waveguide Module ´ Maciej Cwikli´ nski1 , Nico Riedmann12 , Robert Ziegler1 , Martin Vossiek2 , Peter Brückner3 , Dirk Schwantuschke3 , Michael Mikulla3 1 2 Rohde & Schwarz, Germany Institute of Microwaves and Photonics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany 3