Proceedings of the 19th European Microwave Integrated Circuits Conference A Frequency-Agile Digital-to-RF Power Amplifier in 22 nm FD-SOI CMOS Technology Manuel Wittlinger, Markus Grözing, Manfred Berroth, Georg Rademacher Institute of Electrical and Optical Communications, University of Stuttgart, Germany {manuel.wittlinger, markus.groezing, manfred.berroth, georg.rademacher}-int.uni-stuttgart.d

Proceedings of the 19th European Microwave Integrated Circuits Conference A Transmitter/Receiver Link for High Data Rate Polymer Microwave Fiber Communication at Y-band Frida Strömbeck, Yu Yan, Herbert Zirath Microwave Electronics Laboratory, Chalmers University of Technology, Sweden stfrida-chalmers.se Abstract ? A Y-band (170-260 GHz) ultra high data rate transmitter (Tx) and receiver (Rx), ar

Proceedings of the 19th European Microwave Integrated Circuits Conference Extension of SC-gate FET Concept to 100 GHz Band and Parallel Connection Keiichi Sakuno1, Eiji Suematsu2, Shinji Hara3 Nagoya University, Japan { sakuno.keiichi, eijisuematsu, 3shinjihara}-imass.nagoya-u.ac.jp 1 2 upon increasing gmeff. We fabricated a prototype SC-gate GaN HEMT and reported that fmax improved from 41 to

Proceedings of the 19th European Microwave Integrated Circuits Conference A 24 GHz 14 W/22 W GaN Power Amplifier MMICs for Millimeter Wave band Wireless Power Transfer Keigo Nakatani#1, Akihito Hirai#, Jun Kamioka#, Tomohiro Yao#, Kento Saiki#, Shintaro Shinjo# # Information Technology R&D Center, Mitsubishi Electric Corporation, Japan 1 Nakatani.Keigo-cj.MitsubishiElectric.co.jp Abstract ? Thi

Proceedings of the 19th European Microwave Integrated Circuits Conference A 20-46 GHz 28nm FD-SOI CMOS Tunable Twisted Hybrid Coupler with Cross-Coupled Capacitor Banks for 5G Applications #* # # Gwennaël Diverrez , Eric Kerhervé , Magali De Matos , Andreia Cathelin * # Univ. Bordeaux, CNRS, Bordeaux INP, IMS, UMR 5218, France * STMicroelectronics, France {gwennael.diverrez, andreia.catheli

Proceedings of the 19th European Microwave Integrated Circuits Conference A 23.9 dBm Q-Band Power Amplifier in 22nm FD-SOI Using Resonated Amplifier Cores Alexander Haag, Ahmet Ça?gr? Ulusoy Institute of Radio Frequency Engineering and Electronics, Karlsruhe Institute of Technology, Germany {alexander.haag, ulusoy}-kit.edu identical PA cores. At the input and output of the PA cores a one stage fo

Proceedings of the 19th European Microwave Integrated Circuits Conference An Over 100% Fractional Bandwidth Low Noise Amplifier with Gate-Drain Transformer-Feedback in 90-nm CMOS Process Yi-Heng Lee#1, Chau-Ching Chiong*2, Yun-Shan Wang#3, Huei Wang#4 # Dept. of Electrical Engineering and Graduate Institute of Communication Engineering, National Taiwan University, Taiwan * Institute of Astronomy

Proceedings of the 19th European Microwave Integrated Circuits Conference High-Sensitivity 270-320 GHz InGaAs-Based Power Detector with Temperature-Compensation Mechanism Thomas Ufschlag#1 , Benjamin Schoch#2 , Dominik Wrana#3 , Lukas Gebert#4 , Axel Tessmann$5 , Arnulf Leuther$6 , Sandrine Wagner$7 , Ingmar Kallfass#8 # Institute of Robust Power Semiconductor Systems (ILH), University of Stuttg

Proceedings of the 19th European Microwave Integrated Circuits Conference A Low Phase Noise VCO for 60 GHz Radar Applications with a Direct Transformer-Based Fourth Harmonic Extraction in 28 nm CMOS Sarah Koop-Brinkmann$ ¶ , Giovanni Steffan# ¶ , Victor Lasserre$ , Fabio Padovan# , Matteo Bassi# , Vadim Issakov$ Institute for CMOS Design, Technische Universität Braunschweig, Germany # Infineon Te

Proceedings of the 19th European Microwave Integrated Circuits Conference A Novel Stability Margin for Transfer Functions Thomas A. Winslow MACOM, USA Thomas.Winslow-MACOM.com unitless, stability margin function using DPI/DPA transfer functions. The stability margin function is used to detect and solve an instability problem in a K Band GaN power amplifier. Abstract ? This work presents a novel