1.5 to 4.5 GHz VARACTOR-TUNED TRANSISTOR OSCILLATOR P.G. MARECHAL - J. OBREGON ABSTRACT This tered using ratio paper describes the development transistor. the during bipolar We present Fmax/Fmin theoretical of broadband and practical problems varactor tuned oscillators encoun- an oscillator centered at 3 GHz with a tunable frequency = 3 and a minimum output power of 10 mW into 50.

A MILLIMETER-WAVE GUNN-OSCILLATOR, TUNABLE WITH A BARIUM-FERRITE SPHERE M. Lemke* Abstract First results of a 65 GHz barium-ferrite tuned Gunn-oscillator are reported, similar to the YIG-sweepers. Electronic tuning is accomplished by a single crystal barium-ferrite sphere coupled to the image line oscillator circuit. The high internal field of the ferrite considerably reduces the external magne

A 64/4 GHZ DOVJN CONVERTER COMMUNICATITON SYSTEM and J.Schroth + FOR A 60 GHZ SATELLITE M.Bischoff ABSTRACT An upperside band down converter from 64 to 4 GHz for a 60GHz satellite communication system was developed. This converter is consisting of a single ended mixer, a local' oscillator, a directional filter, an image rejection filter, an IF-preamplifier and the power-supply. In order to

SPACEBORNE K-BAND PARAMETRIC AMPLIFIERS: PRESENT AND FUTURE A. D'AMBROSIO ABSTRACT The paper Recent Finally discusses unit, some peculiar operating at 20 GHz aspects of spaceborne is described are likewise paramps. with some detail. and presented An operational discussed. some conclusions are drawn. at 14 GHz, developments and at 30 GHz 

MINIMUM FREQUENCY NOISE IN OSCILLATORS APPLYING .AN OVERCOUPLED CAVITY T.Berceli ABS~RACT Frequency noise in oscillators can be reduced bY circuit methods. According to our recent results, a significant reduction in frequency noise has been achieved by an overcoupled cavity. In comparison to a single cavity oscillator, the noise reduction is 10 dB with kQ2=2, and 23 dB with kQ2=5. In the experim

NOISE IN MUTUALLY COUPLED OSCILLATORS by Klaus SchUnemann, Reinhard Knochel, and Josef Kalinski ABSTRACT A general noise theory for microwave oscillators, which is based upon the describing function method, is developed and applied to the cases of mutually coupled and multiple-device oscillators. Explicit expressions are derived for the output power, the FM- and the AM-noise. Both theoretic

Q-BAND INDIUM PHOSPHIDE TRANSFERRED ELECTRON AMPLIFIERS D.M. Brookbanks, F.J. Cotton, A.M. Howard and R.J. Lang ABSTRPC T Transferred Electron Amplifiers have been constructed from n+-n-n+ layers of indium phosphide for use in the frequency range 26.5 40 GHz (Q-band). By optimisation of the device design and a minimisation of parasitic contact resistances noise figures of 10 dB have been r

HIGH EFFICIENCY J BAND READ IMPATT AMPLIFIERS L D Clough, H A Deadman, J G Smith, C A Tearle, J C H Birbeck. ABSTRACT This paper describes the development of an efficient, compact amplifier with a gain of 20 dB and an output of 2 W in J Band. An overall efficiency of greater than 10% was achieved using GaAs Read IMPATT diodes with Schottky barrier contacts in a three stage reflection amplif

THE DISTRIBUTED OSCILLATOR: A SOLUTION FOR POWER GaAs IMPATT COMBINING Y. Archambault ABSTRACT Multidiode distributed oscillators allow combining several high power GaAs Impatt diodes in a compact module. According to this principle, the diodes are strongly coupled to a low-Q resonant circuit. The modes and resonant frequencies depend heavily upon the diode reactances. The flat cavity comb