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TIME DOMAIN IMMITTANCE MEASUREMENTS
PILLER U.
TIME DOMAIN IMMITTANCE MEASUREMENTS U. PILLER ABSTRACT: The fundamentals of the time domain reflectometry (TOR) are reinvestigated and the measuring method is extended to time domain transmission (TOT). It is shown. that for immittance measurements high resolution can be achieved by either decreasing the risetime or increasing the amplitude of the ramp test pulse. The effect of fixed reactance
A 700 W 12 GHZ TWT FOR TV SATELLITES APPLICATIONS
Seunik H., Hanf F., Wallander S.
A 700 W 12 GHz TWT FOR TV SATELLITE APPLICATIONS Horst Seunik,* Fritz Hanf,* Sven Wallander + Abstract As part of a 700 W CW transponder for a direct TV broadcasting satellite operating in the 11.7 to 12.5 GHz band, a traveling-wave tube (TWT) and directly radiating multistage collector are being developed. The state-of-the-art TWT is periodic permanent magnet (PPM) focused and incorp
RESULTS OF THE DEVELOPMENT OF A 700 W 12 GHZ TWT FOR DIRECT TV BROADCASTING SATELLITES
Deml D., Bluhm K.H., Radlinger H.
RESULTS OF THE DEVELOPMENT BROADCASTING SATELLITES OF A 700 W 12 GHZ TWT FOR DIRECT TV D. Deml +, K.H. Bluhm +, H. Radlinger + ABSTRACT The paper describes the first phase of the development of a satellite TWT with an output power of P2 = 700 W. Design considerations for more than 7 years life are presented. The concept of the tube with coupled cavity, self-radiating 5 stage collector and
LOWER VOLTAGE OPERATION OF THE LEDATRON
Mizuno K., Kuji N., Ono S.
LOWER Koji VOLTAGE Mizuno, OPERATION Norio Kuji, OF THE LEDATRON and Shoichi Ono ABSTRACT We have successfully observed the millimetre wave oscillation field distribution of the Fabryin the Ledatron due to the TEM0 2 Perot mode, which had been predicted by our theory of operation. Through operation of this mode, we can reduce an electron accelerating voltage about 10 percent to obtain the same
A 2mm WAVE GENERATOR, USING A SPIRALLING ELECTRON BEAM
Beck A.H., Caldwell-Nichols C.J.
A 2mm BEAM WAVE GENERATOR, USING A SPIRALLING ELECTRON . A. H. Beck * and C. J. Caldwell-Nichols + ABSTRACT A 2mm wave generator that uses a helical electron beam spiralling around the axis of a nearly square waveguide cavity is described. The beam interacts with the TElln mode in the cavity and the frequency of gyration around the axis is closely equal to half the signal frequency, thus ha
INVESTIGATIONS ON MULTICARRIER OPERATION OF HIGH EFFICIENCY TRAVELING-WAVE TUBES (TWT'S)
PALLUEL P., FLEURY G., GOSSET P.
ELECTRONIC TUNING OF HIGH POWER X-BAND MAGNETRONS WITH FERRITES
BAHRI J.L., PEYRARD Y.
ELECTRONIC F ERRITES TUNING OF HIGH POWER X-BAND MA.GNETRONS WITH .' J. L. BARRI . and Y. PEYRARD + ABSTRACT:Frequency agile magnetrons are important in radar systems employing transmitter frequency agility to provide improvement in glint, fading and clutter. Electronic tuning is preferred for reasons of speed and reliability, and as such, it has high potential for such applications. Electro
APPLIED ACOUSTIC SURFACE WAVES -A Current Assessment
Ash E.A.
APPLIED Eric ACOUSTIC SURFACE WAVES -A Current Assessment A. Ash ABSTRACT The current status are examined with microwave systems of several a particular design. classes of acoustic view to assessing surface wave their probable components impact on
INDUSTRIAL MICROWAVE APPLICATIONS
Geoffrey Voss W.A.
INDUSTRIAL MICROWAVE APPLICATIONS * W.A. Geoffrey Voss ABSTRACT: Industrial microwave applications are rapidly increasing. Their potential in certain areas, the food, rubber and textile industries arises from a combination of advantages: efficient energy conversion, automation and product quality control. Many other heating and drying applications are under consideration today; these include
ACTIVE MICROWAVE SEMICONDUCTOR DEVICES
Thim H.W.
ACTIVE MICROWAVE Hartwig W. Thim ABSTRACT SEMICONDUCTOR DEVICES This paper presents a survey of active microwave semiconductor devices with emphasis on devices made from Gallium Arsenide which is presently the material with the greatest scope and promise. Thanks to the three properties of high mobility low threshold field and the existence of semi-insulating substrate GaAs is now preferably use
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