Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers
Michele Squartecchia, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet, Agnieszka Konczykowska
In this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-s