Proceedings of the 13th European Microwave Integrated Circuits Conference A Terahertz Direct Detector in 22nm FD-SOI CMOS Ritesh Jain1 , Robin Zatta1 , Janusz Grzyb1 , David Harame2 , Ullrich R. Pfeiffer 1 IHCT, 1 University of Wuppertal, Germany Dresden, Germany rjain-uni-wuppertal.de 2 GLOBALFOUNDRIES, pW/Hz1/2 respectively for 0.855 THz radiation at a chopping frequency of 3 kHz. The NEP r

Proceedings of the 13th European Microwave Integrated Circuits Conference A Broadband 4 ? 18 GHz Active Quadrature Hybrid Paul Sangaré#1, Christophe Loyez*2, Kevin Carpentier*, Markus Mayer#3, Dirk Hartung#, François Parickmiler#, Nathalie Rolland^ # ARELIS, Zone industrielle de Marville, 55600 Marville, France IEMN, IEMN-UMR 8520, Avenue Poincaré BP 60069, 59652 Villeneuve D'Ascq Cedex, France

Proceedings of the 13th European Microwave Integrated Circuits Conference Sparse model selection of digital predistorters using Subspace Pursuit Juan A. Becerra, Daniel Herrera, Mar´?a J. Madero-Ayora, Carlos Crespo-Cadenas Dept. Signal Theory and Communications, University of Seville, Seville, Spain jabecerra-us.es, danherluq-alum.us.es, mjmadero-us.es, ccrespo-us.es set S, which is defined as

Proceedings of the 13th European Microwave Integrated Circuits Conference DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications M. Sadegh Dadash1, Shai Bonen1, Utku Alakusu1, David Harame2, Sorin P. Voinigescu1 1 ECE, University of Toronto, Toronto, ON, M5S 3G4, Canada 2 GlobalFoundaries, Dresden, Germany Abstract?The high frequency performance of fully wired 22nm F

Proceedings of the 13th European Microwave Integrated Circuits Conference A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN HEMTs S. J. Duffy#1, B. Benbakhti#, W. Zhang#, K. Kalna*, K. Ahmeda*, M. Boucherta&, N. E. Bourzgui&, H. Maher%, A. Soltani% #Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, United Kingdo

Proceedings of the 13th European Microwave Integrated Circuits Conference Three-Path SiGe BiCMOS LNA on Thinned Silicon Substrate for IoT Applications Sefa Özbek*1, Markus Grözing*2, Golzar Alavi#a3, Joachim N. Burghartz#a4, Manfred Berroth*5 * Institute of Electrical and Optical Communications Engineering (INT), University of Stuttgart, Germany # Institute of Nano- and Microelectronic Systems (

Proceedings of the 13th European Microwave Integrated Circuits Conference 1-Package 500W High Efficiency LDMOS Doherty Power Amplifier Jean-christophe Nanan#1, Yuanyuan Dong#2, Sandra De Meyer#3, Damien Scatamacchia#4 # NXP, France { jean-christophe.nanan, yuanyuan.dong, 3sandra.de-meyer, 4damien.scatamacchia}-nxp.com 1 2 Abstract ? This paper presents a LDMOS high power high gain peaking devi

Proceedings of the 13th European Microwave Integrated Circuits Conference Non-Linear Distortion in Ultra Wideband GaN Power Amplifiers Emilio Delgado-Pascual#1, Eduardo Oreja-Gigorro#2, Juan José Sánchez-Martínez#3, Maria Luz Gil-Heras#4, Virginia Bueno-Fernández#5, Antonio Bódalo-Márquez #6, Jesús Grajal*7 # Indra Sistemas S.A., Spain Universidad Politécnica de Madrid (UPM), Spain {1edelgado, 2

Proceedings of the 13th European Microwave Integrated Circuits Conference A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology M. Hossain1, M. H. Eissa2, M. Hrobak1, D. Stoppel1, N. Weimann1, 3, A. Malignaggi2, A. Mai2, D. Kissinger2, W. Heinrich1 and V. Krozer1, 4 1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), 12489 Berlin, Germany 2 IHP GmbH,

Proceedings of the 13th European Microwave Integrated Circuits Conference A Systematic Investigation of Behavioural Model Complexity Requirements M. Rocio Moure#1, Michael Casbon*#2, Mónica Fernández-Barciela#3, Paul J. Tasker*#4 # Signal Theory and Communications Department, University of Vigo, Spain * School of Engineering, Cardiff University, United Kingdom 1 { mamoure, 3monica.barciela }-uvi