Proceedings of the 13th European Microwave Integrated Circuits Conference Design of an S-Band Chireix Outphasing Power Amplifier based on a Systematic Bandwidth Limitation Analysis Anna Piacibello#1 , Roberto Quaglia*2 , Marco Pirola#3 , Steve Cripps*4 # Politecnico di Torino, Torino, Italy University, Cardiff, Wales, UK {1 anna.piacibello, 3 marco.pirola}-polito.it, {2 QuagliaR, 4 CrippsSC}-car

Proceedings of the 13th European Microwave Integrated Circuits Conference Ultra-Compact Low-Loss Integrated TransformerBased Ku-Band Quadrature Hybrid Coupler Manuel Potéreau#1, Nathalie Deltimple#2, Anthony Ghiotto #3 # University of Bordeaux, Bordeaux INP, UMR CNRS 5218, IMS Laboratory, Talence, France {1mpoterea, 2ndeltimple, 3aghiotto}-u-bordeaux.fr Abstract?In this paper, an ultra-compact

Proceedings of the 13th European Microwave Integrated Circuits Conference A 6-18 GHz GaN on SiC High Power Amplifier MMIC for Electronic Warfare Eduardo Oreja-Gigorro#1, Emilio Delgado Pascual#2, Juan José Sánchez-Martínez#3, María Luz Gil-Heras#4, Virginia Bueno-Fernández#5, Antonio Bódalo-Marquez#6, Jesús Grajal*7 # Indra Sistemas S.A., Spain Universidad Politécnica de Madrid (UPM), Spain {1eo

Proceedings of the 13th European Microwave Integrated Circuits Conference Rapid Design of Compact Impedance Matching Transformers for Energy Harvesting Applications By Means Of Inverse and Forward Surrogates Slawomir Koziel#*1, Adrian Bekasiewicz*2 # * School of Science and Engineering, Reykjavik University, Reykjavik, Iceland Faculty of Electronics, Telecommunications & Informatics, Gdansk Uni

Proceedings of the 13th European Microwave Integrated Circuits Conference A 50W Highly Linear 3-Way Integrated Wideband Doherty PA for Small-Cell Application Hao Zhang#1, Sandra De Meyer#, Claude Duvanaud*, Smail Bachir* # RF power Department, NXP semiconductors, Toulouse, France * Laboratoire XLIM, 4 avenue Varsovie, 16000, Angoulême France 1 Hao.ZHANG_2-nxp.com power range up to 12dB OBO . The

Proceedings of the 13th European Microwave Integrated Circuits Conference Ka-Band P-I-N Diode Based Digital Phase Shifter Daniel Kramer MACOM, USA Daniel.Kramer-macom.com dB of loss. The phase shifters discussed in this paper can handle at least 32 dBm CW RF input power and only have an average insertion loss of 3.3 dB for 4-bits and 5.3 dB for 6 bits across the band. Abstract ? Phase shifters

Proceedings of the 13th European Microwave Integrated Circuits Conference 5G 26 GHz and 28 GHz Bands SiGe:C Receiver with Very High-Linearity and 56 dB Dynamic Range Alessandro Fonte#1, Fabio Plutino#2 Laurence Moquillon*3, Stephane Razafimandimby*4, Sebastien Pruvost*5 # 29.50 Europe?s 5G pioneer band USA?s 5G band for licensed use China?s 5G band (compatibility studies) Japan?s 5G band (inves

Proceedings of the 13th European Microwave Integrated Circuits Conference X-Parameter Characterization of LDMOS Devices for Broadband Doherty High-Power Amplifier Design Alessandro Cidronali, Giovanni Collodi Department of Information Engineering, University of Florence, V. S. Marta, 3, I-50139, Florence, Italy {alessandro.cidronali,giovanni.collodi}-unifi.it II. D ESIGN P RINCIPLES OF W IDEBAND

Proceedings of the 13th European Microwave Integrated Circuits Conference A three-layer resist process for T- and ?-gates in high electron mobility transistor fabrication S. Riedmüller1,4,#, J-C. Jacquet3, M. Madel1, C. Chang2, G. Callet2, S. Piotrowicz3, S. Delage3, J. Gruenenpuett1, H. Blanck1, F. Scholz4 1 2 United Monolithic Semiconductors GmbH, Wilhelm-Runge-Straße 11, 89081 Ulm, Germany U

Proceedings of the 13th European Microwave Integrated Circuits Conference A 239 ? 315 GHz CMOS Frequency Doubler Designed by Using a Small-Signal Harmonic Model Kyoya Takano1, Ruibing Dong, Sangyeop Lee, Shuhei Amakawa, Takeshi Yoshida, and Minoru Fujishima Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan 1 kyoya-ieee.org Abstract ? In order to realize a wideband frequ