Proceedings of the 13th European Microwave Integrated Circuits Conference A Multipurpose 76 GHz Radar Transceiver System for Automotive Applications Based on SiGe MMICs Jan Schoepfel1 , Simon Kueppers 2 , Klaus Aufinger3 , Nils Pohl1 1 Ruhr-University Bochum, D-44780 Bochum, Germany FHR, D-53343 Wachtberg, Germany Infineon Technologies AG, D-85579 Neubiberg, Germany Email: jan.schoepfel-ruhr-uni

Proceedings of the 13th European Microwave Integrated Circuits Conference A 3.9-4.7 GHz 0.35 mW DCO with -187.4 dBc FoM in 28nm CMOS Run Levinger, Roi Levi, Evgeny Shumaker, Shunit Levin and Gil Horovitz Communications and Devices Group, Intel, Petach-Tikva, Israel run.levinger-intel.com Abstract ? This paper presents an LC tank, ultra-low power CMOS digitally controlled oscillator (DCO) with re

Proceedings of the 13th European Microwave Integrated Circuits Conference Mixed technologies Packaged High Power Frond-End for Broadband 28GHz 5G solutions Mohammed Ayad1, Anne-Marie Couturier, Pascal Poilvert, Laurent Marechal, Philippe Auxemery2 United Monolithic Semiconductors SAS, 10 avenue du Québec, 91140 Villebon-sur-Yvette, France {1Mohammed.Ayad, 2Philippe.Auxemery}-ums-gaas.com Today,

Proceedings of the 13th European Microwave Integrated Circuits Conference Fully automated RF-thermal stress workbench with S-parameters tracking for GaN reliability analysis D. Saugnon1,2, J.G. Tartarin1, B. Franc1, H. Maher2, F. Boone2 1 2 LAAS-CNRS, University of Toulouse, CNRS, UPS, Toulouse, France Laboratoire Nanotechnologies Nanosystèmes, CNRS UMI-3463, Institut Interdisciplinaire d?Innov

Proceedings of the 13th European Microwave Integrated Circuits Conference A Low-cost 30-W class X-band GaN-on-Si MMIC Power Amplifier with a GaAs MMIC Output Matching Circuit Jun Kamioka, Yoshifumi Kawamura, Yukinobu Tarui, Kazuhiko Nakahara, Yoshitaka Kamo, Hiroyuki Okazaki, Masatake Hangai, Koji Yamanaka, and Hiroshi Fukumoto Information Technology R&D Center, Mitsubishi Electric Corporation, J

Proceedings of the 13th European Microwave Integrated Circuits Conference Robust X-band GaN LNA with Integrated Active Limiter Ça?da? Ya?basan, Ahmet Aktu? Aselsan Inc., Ankara, Turkey cyagbasan-aselsan.com.tr, aaktug-aselsan.com.tr electromagnetic bombs generating excessive microwave powers. Requirements for survivability is generally higher than 10 W. Although GaN LNAs have much higher input p

Proceedings of the 13th European Microwave Integrated Circuits Conference RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs F. Heinz?? , D. Schwantuschke? , A. Leuther? , A. Tessmann? , M. Ohlrogge? , R. Quay?? , and O. Ambacher?? ? Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, 79108 Freiburg, Germany felix.heinz-iaf.fraunhofer.de ? Institute for Sustainable Tec

Proceedings of the 13th European Microwave Integrated Circuits Conference Reliable Parameter Extraction of Asymmetric GaN-based Heterojunction Field Effect Transistors Xuekun Du#*1, Sagar K. Dhar#, Anwar Jarndal^, Craig Storey+, Mohamed Helaoui#2, Simon Wingar+, Chang Jiang You*, Jingye Cai*, Fadhel M. Ghannouchi#3 # iRadio Lab, University of Calgary, Canada University of Electronic Science and

Proceedings of the 13th European Microwave Integrated Circuits Conference Broadband and Highly Accurate X-Band Vector-Sum Phase Shifter Using LC-Type Power Splitter Takanobu Fujiwara, Mitsuhiro Shimozawa Mitsubishi Electric Corporation, Kamakura, Kanagawa, 247-8501, Japan Fujiwara.Takanobu-cb.MitsubishiElectric.co.jp, Shimozawa.Mitsuhiro-ce.MitsubishiElectric.co.jp In the vector-sum phase shifter

Proceedings of the 13th European Microwave Integrated Circuits Conference Broadband GaN-based Power Amplifier MMIC and Module for V-Band Measurement Applications D. Schwantuschke, P. Brückner, R. Amirpour, A. Tessmann, M. Kuri, M. Rießle, H. Maßler and R. Quay Fraunhofer Institute for Applied Solid-State Physics, Freiburg, Germany dirk.schwantuschke-iaf.fraunhofer.de Abstract ? This work presents