Proceedings of the 13th European Microwave Integrated Circuits Conference High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies Edon Derguti?* , Erdin Ture? , Sebastian Krause? , Dirk Schwantuschke? , R¨udiger Quay? , Oliver Ambacher? ? Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany * Albert-Ludwigs-Universit¨at, Freiburg, Germany edon

Proceedings of the 13th European Microwave Integrated Circuits Conference A Class E Digital Transmitter for 16-APSK Gavin T. Watkins Toshiba Research Europe Limited 32 Queen Square, Bristol, BS1 4ND, UK Gavin.watkins-toshiba-trl.com II. CLASS E AMPLIFIERS The class E amplifier is well known for being capable of achieving very high efficiency by shaping its current and voltage waveforms to avoid

Proceedings of the 13th European Microwave Integrated Circuits Conference First K-band Capable 12-bit 6 GSps Digital to Analogue Converter R. Pilard, J. Duvernay, M. Wingender, F. Bore, K. Salmi, N. Chantier Teledyne e2v, France romain.pilard-teledyne-e2v.com A. Circuit Schematic The circuit is based on the Infineon?s B7HF200 SiGeC HBT bipolar technology [2]. It is composed of a selectable 4:1 or

Proceedings of the 13th European Microwave Integrated Circuits Conference (Ba,Sr)(Ti,Mn)O3 Perovskite Films for Co-Planar Waveguide Tunable Microwave Phase Shifters Xingli He#, Ioanna Bakaimi#,Nur Zatil Ismah Hashim#, Yudong Wang#, Ali Mostaed*, Ian M Reaney*, Qi Luo&, Steven Gao&, Brian E. Hayden#, and C.H. Kees de Groot#1 # * Faculty of Engineering & Physical Science, University of Southampton

Proceedings of the 13th European Microwave Integrated Circuits Conference X-band GaAs Phase Driver MMIC optimized for GaN-based Phased-Array Radar Transmit Chain M. van Heijningen1, J. Essing2, F.E. van Vliet3 # TNO, The Netherlands { marc.vanheijningen, 2jaap.essing, 3frank.vanvliet}-tno.nl 1 Abstract ? In the transmit chain of high-power phased-array radars more and more use is made of Galliu

Proceedings of the 13th European Microwave Integrated Circuits Conference SiGe BiCMOS and RFSOI Technologies for Millimeter-Wave Applications Alvin Joseph, Vibhor Jain, Chaojiang Li#, Randy Wolf, John Ellis-Monaghan, and Arvind Kumar* GLOBALFOUNDRIES, Essex Junction, VT, USA # GLOBALFOUNDRIES, Indiana, USA * GLOBALFOUNDRIES, East Fishkill, NY, USA alvin.joseph-globalfoundries.com system implemen

Proceedings of the 13th European Microwave Integrated Circuits Conference Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization Ryo Ishikawa, Yoichiro Takayama, and Kazuhiko Honjo The University of Electro-Comminications, Chofu, Tokyo, Japan {r.ishikawa, y.takayama, honjou}-uec.ac.jp ZDoptCA low ZDoptCA high Output matching for two power levels & biasing

Proceedings of the 13th European Microwave Integrated Circuits Conference X-band Low Noise Figure T/R Switch-Module using a Superconducting T/R Switch Hiroaki Ikeuchi#1, Tamio Kawaguchi#, Noritsugu Shiokawa#, Yuichi Sawahara#, Hiroyuki Kayano# # Wireless System Laboratory, Corporate Research & Development Center, Research & Development Div., Toshiba Corp. 1, Komukai-Toshiba-cho, Saiwai-ku, Kawas

Proceedings of the 13th European Microwave Integrated Circuits Conference A New Compact Model for Accurate Simulation of RF Noise in Sub-40nm Multi-finger nMOSFETs Jyh-Chyurn Guo#1 and Kuo-Liang Yeh#2 Institute of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan 1 jcguo-mail.nctu.edu.tw 2 rexyeh-yahoo.com to explore a new compact model with proven accuracy in high frequenc

Proceedings of the 13th European Microwave Integrated Circuits Conference A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module using Flip-Chip Bonding and a Device Embedded PCB Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, and Hiroshi Fukumoto Mitsubishi Electric Co