Proceedings of the 13th European Microwave Integrated Circuits Conference An E-Band Variable Gain Low Noise Amplifier in 90-nm CMOS Process Using Body-Floating and Noise Reduction Techniques Yunshan Wang, Chun-Nien Chen, Yi-Ching Wu and Huei Wang Department of Electrical Engineering and Graduate Institute of Communication Engineering National Taiwan University, Taipei, Taiwan, 106, R.O.C. {d01942

Proceedings of the 13th European Microwave Integrated Circuits Conference X band GaN Based MMIC Power Amplifier with 36.5dBm P1-dB for Space Applications Armagan Gurdal1, 2, Burak Alptug Yilmaz1,2, Omer Cengiz1, Ozlem Sen1, Ekmel Ozbay1,2 1 Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey Department of Electrical and Electronics Engineering, Bilkent University, 06800 Anka

Proceedings of the 13th European Microwave Integrated Circuits Conference A 112 ?W F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection Bart Philippe, Patrick Reynaert KU Leuven, Leuven, Belgium {bart.philippe, patrick.reynaert}-esat.kuleuven.be Abstract ? This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a tra

Proceedings of the 13th European Microwave Integrated Circuits Conference EM-Based GaN Transistor Small-Signal Model Scaling G. van der Bent, A.P. de Hek, F.E. van Vliet TNO, The Hague, The Netherlands gijs.vanderbent-tno.nl intrinsic part and the metallisation, since these resistive effects are not easily included in the EM simulation without detailed knowledge of the technology or without elabo

Proceedings of the 13th European Microwave Integrated Circuits Conference On Stability Analysis and Loop Oscillation of MultiFinger GaN FET Cells for High Power Amplifiers Ammar Issaoun, Petra Hammes, Martin Fagerlind, Francis Chai, Thomas Roedle Ampleon, Halfgeleiderweg 8, 6534 AV Nijmegen, The Netherlands {ammar.issaoun, petra.hammes, martin.fagerlind, francis.chai, thomas.roedle}-ampleon.com

Proceedings of the 13th European Microwave Integrated Circuits Conference LDMOS Technology for Power Amplifiers up to 12 GHz S.J.C.H. Theeuwen, H. Mollee, R. Heeres, and F. van Rijs Ampleon Netherlands, Nijmegen, The Netherlands steven.theeuwen-ampleon.com Abstract ? We show the capability of LDMOS technology for power amplifiers at frequencies up to 12 GHz. The frequency roll-off of the RF para

Proceedings of the 13th European Microwave Integrated Circuits Conference A W-Band Frequency Tripler With Integrated Waveguide Filter Matching Cheng Guo1, Jeff Powell 1, Xiaobang Shang2, Michael J. Lancaster1, Jun Xu3, Colin Viegas4 1 The University of Birmingham, UK National Physical Laboratory, UK 3 University of Electronic Science and Technology of China, China 4 STFC, Rutherford Appleton Lab

Proceedings of the 13th European Microwave Integrated Circuits Conference Characterization and Electrical Modeling including Trapping Effects of AlN/GaN HEMT 4x50?m on silicon substrate Mohamed Bouslama#1, Ahmad Al Hajjar #2, Raphael Sommet #3, Farid Medjdoub *4, Jean-Christophe Nallatamby #5 # Univ.limoges, CNRS, Xlim, UMR 7252, F-19100, Brive IEMN-CNRS, Avenue Henry Poincaré, 59652 Villeneuve d

Proceedings of the 13th European Microwave Integrated Circuits Conference An E-band Variable-Gain Amplifier Using a Programmable Attenuator Kimia T. Ansari, Tyler Ross, Morris Repeta Huawei Technologies, Ottawa, Canada {kimia.ansari, tyler.ross, morris.repeta} -huawei.com Abstract ? In this paper we present a programmable variable-gain amplifier (VGA) for a 5G demonstration system at E-band. The

Proceedings of the 13th European Microwave Integrated Circuits Conference State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs Friedbert van Raay, Dirk Schwantuschke, Arnulf Leuther, Peter Brückner, Detlef Peschel, Rüdiger Quay, Michael Schlechtweg and Oliver Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF) Tullastr. 72, D-79108 Freiburg, Ger