Proceedings of the 13th European Microwave Integrated Circuits Conference A Novel Laser-Assisted Fabrication Process for Nanowired Substrate Integrated Devices Vivien Van Kerckhoven 1,2 , Luc Piraux1 , Isabelle Huynen2 1 IMCN, Universit´e catholique de Louvain, Belgium Universit´e catholique de Louvain, Belgium vivien.vankerckhoven-uclouvain.be 2 ICTEAM, in coplanar or microstrip technologies.

In this contribution, a design methodology for octave-bandwidth power amplifiers (PA) for 5G communication systems using surface mount dual-flat-no-lead packaged gallium-nitride high-electron-mobility transistor devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 75% fractional bandwidth for S- (1.9?4.2 GHz) and C-band (3.8?8.4 GH

For a fully 360° detection around a vehicle, novel automotive radar system concepts consist of up to eight radar sensors. The existing sensor-mounting areas, such as front grill or bumper corners would no longer be sufficient. Therefore, additional mounting positions such as B-pillars and side skirts have to be considered, where the radar can observe the side area of the vehicle. However, these ne

A multi-octave receiver chain is presented for the use in a monolithic integrated vector network analyzer. The receiver exhibits a very wide frequency range of 1?32 GHz, where the gain meets the 3 dB-criterion. The differential receiver consists of an ultra-wideband low noise amplifier, an active mixer and an output buffer and exhibits a maximum conversion gain (CG) of 16.6 dB. The main design goa

A microwave design for an industrial scale applicator of a continuous microwave assisted depolymerization of polyethylene terephthalate (PET) has been developed. The cavity is designed for use in combination with an Archimedean screw pump to transport the reaction material, surrounded by a cylindrical pipe with a diameter of 250 mm and a length of 250 mm at the 2.45 GHz ISM band. The proposed desi

In this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line

In this contribution, the impact of extreme environmental conditions in terms of energy-level radiation of protons on silicon?germanium (SiGe)-integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (low-noise amplifiers) are used as carriers for assessing the impact of aggressive stress conditions on their