Proceedings of the 13th European Microwave Integrated Circuits Conference 110?135 GHz SiGe BiCMOS Frequency Quadrupler Based on a Single Gilbert Cell Minsu Ko 1 , Mohamed Hussein Eissa 1 , Johannes Borngr¨aber 1 , Ahmet C ¸ a?gr? Ulusoy 2 , and Dietmar Kissinger 1,3 1 IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 2 ECE Department at Michigan State University, East Lansing, MI 48823,

Proceedings of the 13th European Microwave Integrated Circuits Conference GaAs Balanced Amplifier for Ka-Band Space Communications System L. Pantoli#1, A. Barigelli*2, G. Leuzzi#3, F. Vitulli*4, A. Suriani*5 # Dpt. of Industrial and Information Engineering and Economics, University of L?Aquila, Italy * Thales Alenia Space, Rome, Italy 1 3 { leonardo.pantoli, giorgio.leuzzi}-univaq.it, {2alessand

Proceedings of the 13th European Microwave Integrated Circuits Conference A 120 GHz SiGe BiCMOS Monostatic Transceiver for Radar Applications Efe Öztürk 1,3, Dieter Genschow 1, Uroschanit Yodprasit 1, Berk Yilmaz 1, Dietmar Kissinger 2,3, Wojciech Debski 1 and Wolfgang Winkler 1 1 Silicon Radar GmbH, Im Technologiepark 1, 15236 Frankfurt (Oder), Germany 2 IHP, Im Technologiepark 25, 15236 Frankf

Proceedings of the 13th European Microwave Integrated Circuits Conference Electrothermal X-Parameters for Dynamic Modeling of RF and Microwave Power Transistors Sean J. Gillespie1, David E. Root1,2, Mihai Marcu2, Peter H. Aaen1 1 Department of Electrical and Electronic Engineering, University of Surrey, Guildford, UK 2 Keysight Technologies, Inc., Santa Rosa, CA, USA s.gillespie-surrey.ac.uk,

Proceedings of the 13th European Microwave Integrated Circuits Conference A Framework for the Generation of Guaranteed Stable Small-Signal Bias-Dependent Behavioral Models M. De Stefano1 , S. Grivet-Talocia2 , T. Bradde3 , A. Zanco4 Dept. Electronics and Telecommunications, Politecnico di Torino, Italy 1 marco.destefano-polito.it, 2 stefano.grivet-polito.it, 3 tommaso.bradde-polito.it, 4 alessand

Proceedings of the 13th European Microwave Integrated Circuits Conference Comparison of C-doped AlN/GaN HEMTs and AlN/GaN/AlGaN double heterostructure for mmW applications R. Kabouche#1, J. Derluyn*, R. Püsche*, S. Degroote*, M. Germain*, R. Pecheux#, E. Okada#, M. Zegaoui#, and F. Medjdoub#2 # IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincaré, 5965

Proceedings of the 13th European Microwave Integrated Circuits Conference Compensation of Performance Degradation due to Thermal Effects in GaN LNA Using Dynamic Bias Johan Bremer#1 , Lowisa Hanning#2 , Niklas Rorsman#3 Mattias Thorsell#4 # Microwave Electronics Laboratory, Chalmers University of Technology, Sweden {1 bremerj, 2 lowisa, 3 niklas.rorsman, 4 mattias.thorsell}-chalmers.se Abstract

Proceedings of the 13th European Microwave Integrated Circuits Conference A Ku-Band Injection-Locked Push-Push Oscillator Using Two-Wavelength Ring Resonator Elton N. Lima, Takayuki Tanaka, Ichihiko Toyoda Saga University 1 Honjo-machi, Saga 840-8502, Japan {Elton, Tanaka}-ceng.ec.saga-u.ac.jp, toyoda-cc.saga-u.ac.jp Abstract ? This paper presents an injection-locked push-push oscillator which g

Proceedings of the 13th European Microwave Integrated Circuits Conference Pushing the Linearity Limits of a Digital Polar Transmitter Mohsen Hashemi# , Morteza S. Alavi, and Leo C.N. de Vreede ELCA Lab, Microelectronics Department, Delft University of Technology, The Netherlands # M.Hashemi-tudelft.nl Abstract ? The maximum achievable linearity of a digital polar transmitter (DPTX) is mainly cons

Proceedings of the 13th European Microwave Integrated Circuits Conference 204GHz Stacked-Power Amplifiers Designed by a Novel Two-Port Technique Ahmed S. H. Ahmed#, Ali A. Farid#, Miguel Urteaga*#, Mark J. W. Rodwell# # Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA * Teledyne Scientific Company, Thousand Oaks, CA 91360, USA a_s_ahmed-uc