Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs
Agostino Benvegnů, Davide Bisi, Sylvain Laurent, Matteo Meneghini, Gaudenzio Meneghesso, Denis Barataud, Enrico Zanoni, Raymond Quere
This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y) and output conductance (LF Y). DCT characterization is carried out over a 7-decade time scale. LF Y and Y measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combine