RF-MEMS multi-mode-matching networks for GaN power transistors
Sascha A. Figur, Friedbert van Raay, Rüdiger Quay, Larissa Vietzorreck, Volker Ziegler
This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable input- and output-matching networks for a multi-band gallium nitride (GaN) power-amplifier applications. In the first part, circuit designs are shown and characterized for a fixed operation mode of the transistor, i.e. either a maximum-output-power- or a maximum-power-added-efficiency (PAE)-mode, which are fin