Evaluation of GaN-HEMT power amplifiers using BST-based components for load modulation
Mhd. Tareq Arnous, Alex Wiens, Paul Saad, Sebastian Preis, Zihui Zhang, Rolf Jakoby, Georg Boeck
In this paper, the concept of load-modulated power amplifiers (PAs) is studied. Two GaN-HEMT power amplifiers (PAs), targeted for high efficiency at maximum and output back-off (OBO) power levels, are designed, implemented, and tested across 1.8?2.2 GHz. The load modulation in the first design is realized by tuning the shunt capacitors in the output matching network. A novel method is employed in