Small- and large-signal modeling of InP HBTs in transferred-substrate technology
Tom K. Johansen, Matthias Rudolph, Thomas Jensen, Tomas Kraemer, Nils Weimann, Frank Schnieder, Viktor Krozer, Wolfgang Heinrich
In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III?V based HBTs. It is shown that the modeling o