Proceedings of the 8th European Microwave Integrated Circuits Conference A High-efficiency PA with Peak PAE of 32.9% and 12.7 dBm P1dB for 60 GHz Beamforming Applications in SiGe Srdjan Glisic Silicon Radar Frankfurt Oder, Germany Abstract-- A fully integrated differential power amplifier, produced in 130 nm SiGe process for 60 GHz application is presented. The PA features one-stage cascade topol

Proceedings of the 8th European Microwave Integrated Circuits Conference A Monolithic DC-70-GHz Broadband Distributed Amplifier Using 90-nm CMOS Process Si-Hua Chen#, Shou-Hsien Weng#, Yu-Cheng Liu#, Hong-Yeh Chang#, Jeng-Han Tsai*, Meng-Han Li#, and Shu-Yan Huang# # Department of Electrical Engineering, National Central University Jhongli City, 32001, Taiwan. hychang-ee.ncu.edu.tw * Departmen

Proceedings of the 8th European Microwave Integrated Circuits Conference Enabling GaN High Speed Devices: Microwave Meets Power Electronics ­ and vice versa Joachim Würfl#1, Oliver Hilt#, Eldad Bahat-Treidel#, Paul Kurpas#, Sergei A. Chevchenko#, Olof Bengtsson#, Erhan Ersoy#, Armin Liero#, Andreas Wentzel#, Wolfgang Heinrich#, Nasser Badawi*, Sibylle Dieckerhoff*2 # Ferdinand-Braun-Institut, Le

Proceedings of the 8th European Microwave Integrated Circuits Conference 94-GHz Load Pull measurements of SiGe HBT by extracting output power density in W-Band Issam HASNAOUI* , Elodie CANDERLE* '#, Pascal CHEVALIER#, Daniel GLORIA# and Christophe GAQUIERE * *Microwave Power Devices Group IEMN, UMR CNRS 8520 Villeneuve D'Ascq, France issam.hasnaoui-gmail.com; Christophe.Gaquiere-iemn.univ-lille1.

Proceedings of the 8th European Microwave Integrated Circuits Conference Microwave Watt-Level Rectifiers for Power Recycling Applications Junfeng Xu Massachusetts Institute of Technology Cambridge, MA, USA jfxu-mit.edu Wei Tai Carnegie Mellon University Pittsburgh, Pennsylvania, USA wtai-andrew.cmu.edu David S. Ricketts North Carolina State University Raleigh, NC, USA dricket-ncsu.edu Abstract

Proceedings of the 8th European Microwave Integrated Circuits Conference A Novel Method to Improve the Power Capabilities of Microwave Components Rui Wang, Yun Li, Na Zhang, Wanzhao Cui Science and Technology on Space Microwave Laboratory China Academy of Space Technology (Xi'an) Xi'an, China Wangrui0320-126.com Abstract--A novel method for the multipactor breakdown inhibiting of microwave compon

Proceedings of the 8th European Microwave Integrated Circuits Conference Individual Source Vias for GaN HEMT Power Bars M. Mußer, F. van Raay, P. Br¨ ckner, W. Bronner, R. Quay, M. Mikulla and O. Ambacher u Fraunhofer Institute of Applied Solid-State Physics Tullastr. 72, 79108 Freiburg, Germany Email: markus.musser-iaf.fraunhofer.de Abstract--In this paper the layout concept based on individual

Proceedings of the 8th European Microwave Integrated Circuits Conference 133GHz CMOS Power Amplifier with 16dB Gain and +8dBm Saturated Output Power for Multi-Gigabit Communication Kosuke Katayama, Mizuki Motoyoshi, Kyoya Takano, Li Chen Yang and Minoru Fujishima Graduate School of Advanced Sciences of Matter, Hiroshima University Higashi-Hiroshima, Hiroshima, JAPAN {katayama, mizuki, kyoya, li}-

Proceedings of the 8th European Microwave Integrated Circuits Conference A 60-GHz High-Gain, Low-Power, 3.7-dB Noise-Figure Low-Noise Amplifier in 90-nm CMOS Hsin-Chih Kuo and Huey-Ru Chuang Institute of Computer and Communication Engineering, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, R.O.C. q38991108-mail.ncku.edu.tw chuang_hr-ee.ncku.edu.tw Abstract -

Proceedings of the 8th European Microwave Integrated Circuits Conference Triple Barrier Resonant Tunneling Diodes for Microwave Signal Generation and Detection Gregor Keller*, Anselme Tchegho*, Benjamin Münstermann*, Werner Prost*, Franz-Josef Tegude*, and Michihiko Suhara + *Center for Semiconductor Technology and Optoelectronics, University of Duisburg Essen, Lotharstr. 55, D-47057 Duisburg, Ge