Proceedings of the 8th European Microwave Integrated Circuits Conference A 240 GHz Quadrature Receiver and Transmitter for Data Transmission up to 40 Gbit/s D. Lopez-Diaz, A. Tessmann, A. Leuther, S. Wagner, M. Schlechtweg, O. Ambacher Fraunhofer Institute for Applied Solid State Physics IAF Tullastrasse 72, 79108 Freiburg, Germany F. Kurz Siemens AG Otto-Hahn-Ring 6, 81739 München, Germany R.

Proceedings of the 8th European Microwave Integrated Circuits Conference A 243 GHz Low-Noise Amplifier Module for Use in Next-Generation Direct Detection Radiometers A. Tessmann, V. Hurm, A. Leuther, H. Massler, R. Weber, M. Kuri, M. Riessle, H. P. Stulz, M. Zink, M. Schlechtweg, O. Ambacher Fraunhofer Institute for Applied Solid State Physics (IAF) Tullastrasse 72, D-79108 Freiburg, Germany axel

Proceedings of the 8th European Microwave Integrated Circuits Conference Nonlinear Transistor Modeling for Industrial 0.25-µm AlGaN-GaN HEMTs Christophe Chang #, Valeria Di Giacomo-Brunel #1, Didier Floriot #, Jan Grünenpütt *, Michael Hosch *, Hervé Blanck * United Monolithic Semiconductors SAS 10 Avenue du Québec, 91140 Villebon-sur-Yvette, France 1 # United Monolithic Semiconductors GmbH Wil

Proceedings of the 8th European Microwave Integrated Circuits Conference 160-GHz SiGe-Based Transmitter and Receiver With Highly Directional Antennas in Package Institute Abouzar Hamidipour , Alexander Fischer, , Martin Jahn , and Andreas Stelzer, for Communications Engineering and RF-Systems, Johannes Kepler University Linz, Austria Doppler Laboratory for Integrated Radar Sensors, Johannes Kep

Proceedings of the 8th European Microwave Integrated Circuits Conference A 159-169 GHz Frequency Source with 1.26 mW Peak Output Power in 65 nm CMOS Bassam Khamaisi and Eran Socher School of Electrical Engineering, Tel-Aviv University Tel-Aviv, Israel socher-eng.tau.ac.il Abstract-- This paper present a D-band signal source based on a 2nd harmonic generation of a differential Colpitts VCO that f

Proceedings of the 8th European Microwave Integrated Circuits Conference Dual Band 18.5Gbps Transmitter at 60GHz and 80GHz in 65nm CMOS Anat Rubin, and Eran Socher School of Electrical Engineering, Tel Aviv University Tel Aviv, Israel anatrub1-post.tau.ac.il Abstract--A dual band transmitter implemented using a 65 nm CMOS technology at 60 GHz and 80 GHz is presented. A BPSK modulation scheme is

Proceedings of the 8th European Microwave Integrated Circuits Conference Compact Ka Band Filter in 0.13 m CMOS Using Broadside Coupled Coplanar Stripline Azadeh Taslimi and Koen Mouthaan National University of Singapore azadeh-nus.edu.sg; elemk-nus.edu.sg Abstract-- A Ka band bandpass filter in 0.13 m CMOS is presented. Good out-of-band rejection and a good shape factor are facilitated by the use

Proceedings of the 8th European Microwave Integrated Circuits Conference Blind Nonlinear Compensation Technique for RF Receiver Front-End Yuelin Ma, Yasushi Yamao Advanced Wireless Communication research Center University of Electro-Communications 1-5-1 Chofugaoka, Chofu-shi, Tokyo 182-8585 ma_yuelin-awcc.uec.ac.jp Abstract--A novel nonlinear compensation technique for RF receiver front-end is p

Proceedings of the 8th European Microwave Integrated Circuits Conference A Transformer-Based Current-Reuse QVCO with a Capacitor Coupling Technique in 180 nm CMOS Sho Ikeda, Tatsuya Kamimura, Sang yeop Lee, Hiroyuki Ito, Noboru Ishihara, and Kazuya Masu Solutions Research Laboratory, Tokyo Institute of Technology 4259-S2-14 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan paper-lsi.pi.titech.ac.jp

Proceedings of the 8th European Microwave Integrated Circuits Conference Multi Octave Wideband CMOS Circulator using 0.11 um Process Se-mi Kim1, Yong-Hoon Kim1 School of Information and Mechatronics, Gwangju Institute of Science and Technology (GIST), 123,Chondan-gwagiro, Buk-gu, Gwangju, 500-712, Republic of Korea 1 1 smkim-gist.ac.kr, 1 yhkim-gist.ac.kr PORT1 Abstract-- A multi octave wide