Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers
Bart Nauwelaers, Frank E. van Vliet, François le Chevalier, A. Déchansiaud, R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, R. Quéré
This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called ?integrated cascode? has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-?m GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed