Large-signal characterization of DDR silicon IMPATTs operating up to 0.5 THz
Aritra Acharyya, Jit Chakraborty, Kausik Das, Subir Datta, Pritam De, Suranjana Banerjee, J.P. Banerjee
Large-signal (L-S) characterization of double-drift region (DDR) impact avalanche transit time (IMPATT) devices based on silicon designed to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies up to 0.5 THz is carried out in this paper using an L-S simulation method developed by the authors based on non-sinusoidal voltage excitation (NSVE) model. L-S simulation results s