Proceedings of the 18th European Microwave Integrated Circuits Conference Modeling of 50-nm Metamorphic HEMTs for Cryogenic Ultra-Low-Power Operation Felix Heinz, Arnulf Leuther, Fabian Thome Fraunhofer IAF, Fraunhofer Institute for Applied Solid State Physics, Germany felix.heinz-iaf.fraunhofer.de Therefore, it is necessary to operate the active devices with very low dc-current and dc-voltage i

Proceedings of the 18th European Microwave Integrated Circuits Conference 190 GBd PAM-4 Signal Generation using Analog Multiplexer IC with On-Chip Clock Multiplier Jonathan Schostak12, Tobias Tannert3, Markus Grözing3, Volker Jungnickel12, Christian Schmidt1, Holger Rücker4, Manfred Berroth3, Ronald Freund12 1 Fraunhofer Heinrich-Hertz-Institute, Germany 2 Technische Universität Berlin, Germany

Proceedings of the 18th European Microwave Integrated Circuits Conference Novel Fmax Enhancement Method for GaN HEMTs by Utilizing the Distributed Behavior of a Gate Finger Keiichi Sakuno, Eiji Suematsu, Shinji Hara Nagoya University, Japan {sakuno.keiichi, eijisuematsu, shinjihara }- imass.nagoya-u.ac.jp Abstract ? A novel fmax enhancement method for GaN HEMTs is developed by utilizing the distr

Proceedings of the 18th European Microwave Integrated Circuits Conference A 39.5 dBm GaN Doherty Amplifier MMIC with Phase Control for Ka-band Space Applications J. Romero Lopera, M. Gadringer, E. Leitgeb, H. Paulitsch, W. Bösch TU Graz, Austria {j.romero.lopera, michael.gadringer, erich.leitgeb, helmut.paulitsch, wbosch}-tugraz.at Abstract ? In this paper, a high-power multi-cell, multi-stage Ga

Proceedings of the 18th European Microwave Integrated Circuits Conference Switchable V-band Power Ampli?er with Ultra-Fast Turn-On for Aggressive Duty-Cycling Maximilian Gottfried Becker#1 , Marco Gunia#2 , Diego Mendez*3 , Frank Ellinger#4 # Chair for Circuit Design and Network Theory, Technische Universit¨at Dresden, Germany Engineering Department, Ponti?cia Universidad Javeriana, Colombia 1 {

Proceedings of the 18th European Microwave Integrated Circuits Conference Transition Time of GaN HEMT Switches and its Dependence on Device Geometry Andreas Divinyi#, Niklas Rorsman*, Niklas Billström#, Mattias Thorsell*# # Saab, Surveillance, Radar Solutions, Sweden Microwave Electronics Laboratory, Chalmers University of Technology, Sweden {Andreas.Divinyi3, Niklas.Billstrom, Mattias.Thorsell}

Proceedings of the 18th European Microwave Integrated Circuits Conference Power Amplifier MMICs for Phased-Array Applications Patrick Schuh HENSOLDT Sensors, Germany patrick.schuh-ieee.org Abstract ? In many applications, active phased-array antennas, with distributed RF power amplification, have replaced mechanically scanned antennas, with a centralized RF power amplification. Due to the size co

Proceedings of the 18th European Microwave Integrated Circuits Conference InP DHBT on-wafer RF characterization and smallsignal modelling up to 220 GHz N. Davy#*, M. Deng*, V. Nodjiadjim#, C. Mukherjee*, M. Riet#, C. Mismer#, B. Ardouin#, C. Maneux* # * III-V Lab, joint lab between Nokia, Thales and CEA Leti, France IMS Laboratory, University of Bordeaux, CNRS UMR 5218, Bordeaux INP, France nil

Proceedings of the 18th European Microwave Integrated Circuits Conference A 23 ? 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology Nicholas C. Miller#1, Matthew Hodek*2, Christopher Barasich$3, Edward Gebara$4, John D. Albrecht*5, John Papapolymerou*6 # Air Force Research Laboratory Sensors Directorate, USA Department of Electrical and Computer Engineering, Mich

Proceedings of the 18th European Microwave Integrated Circuits Conference Dual-Band Substrate Integrated Waveguide Filters with Independently Controllable Passband Based on Cambered Cavity and Circular Cavity Xian-Long Yang#1, Xiao-Wei Zhu#2, Xiang Wang*3, Rui-Jia Liu?4 # * School of Information Science and Engineering, Southeast University, China School of Electronic and Optical Engineering, N