Proceedings of the 18th European Microwave Integrated Circuits Conference A D-Band Low-Noise Amplifier MMIC in a 70-nm GaN HEMT Technology Fabian Thome1 , Peter Br¨uckner, R¨udiger Quay Fraunhofer Institute for Applied Solid State Physics IAF, 79108 Freiburg im Breisgau, Germany 1 Fabian.Thome-iaf.fraunhofer.de Abstract ? This paper demonstrates a D-band low-noise amplifier (LNA) monolithic micr

Proceedings of the 18th European Microwave Integrated Circuits Conference A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain M. Rack#, L. Nyssens#, Q. H. Le$, D. K. Huynh$, T. Kämpfe$, J.-P. Raskin#, D. Lederer# # $ Université catholique de Louvain, Belgium Center Nanoelectronic Technologies, Fraunhofer IPMS, Germany differential circuit in a balanced manner. It is

Proceedings of the 18th European Microwave Integrated Circuits Conference V-Band Power Amplifier MMIC on InAlN/GaN/SiC HEMTs Technology M.Bouslama#, S.Piotrowicz#, N.Michel#, L.Trinh-Xuan*, J.Leroy^, S.Aroulanda#, S.Driad^, L.Hamidouche#, J.C.Jacquet#, Q.Lésvesque#, M.Oualli#, C.Chang^, P.Fellon^, S.L.Delage# # III-V Lab, France UMS GmbH, Germany ^ UMS S.A.S, France mohamed.bouslama-3-5lab.fr *

Proceedings of the 18th European Microwave Integrated Circuits Conference A D-band Gain-Switching Phase Shifter with Wideband and Low Temperature-Dependency in 22-nm FD-SOI CMOS Toshihide Kuwabara1 , Naoki Oshima2 , Koki Tanji3 , Shinji Hachiyama4 , Kazuaki Kunihiro5 NEC Corporation, Japan {1 t-kuwa,2 n-oshima,3 koki-tanji,4 hachiyamas,5 k-kunihiro}-nec.com gain for phase states or variations in

Proceedings of the 18th European Microwave Integrated Circuits Conference A W-band Class-F234 SiGe-HBT Power Amplifier with 35/19.7% Peak/PBO6dB PAE and 26% 1-dB Large-Signal Power Bandwidth Eren Vardarli# , Mario Krattenmacher# , Christoph Weimer# , Austin Ying-Kuang Chen$ , Michael Schröter# # Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden, Germany of Electr

Proceedings of the 18th European Microwave Integrated Circuits Conference V- and W-band GaN MMIC Switches Timothy Sonnenberg, Tony Romano, Shane Verploegh, Zoya Popovi? ECEE Department, University of Colorado Boulder, USA Tim.Sonnenberg-colorado.edu Abstract ? This paper presents the design and measured continuous wave (CW) performance of several V- and W-band GaN MMIC HEMT switches in the HRL T

Proceedings of the 18th European Microwave Integrated Circuits Conference A Ka-band 15 W Output Power and >30% PAE GaN MMIC Power Amplifier with Low IMD3 Over 600 MHz Tone Spacing for SATCOM Keigo Nakatani#1, Yutaro Yamaguchi#, Koh Kanaya*, Shintaro Shinjo# # * Information Technology R&D Center, Mitsubishi Electric Corporation, Japan High Frequency & Optical Device Works, Mitsubishi Electric Co

Proceedings of the 18th European Microwave Integrated Circuits Conference A 22-42GHz 28nm CMOS SOI 3:1 VSWR Resilient Balanced Power Amplifier for 5G Application Gwennaël Diverrez#1 , Eric Kerhervé#2 , Magali De Matos#3 , Andreia Cathelin*4 # Univ. Bordeaux, CNRS, Bordeaux INP, IMS, UMR 5218, France * STMicroelectronics, France 1 2 { gwennael.diverrez, eric.kerherve, 3 magali.dematos}-ims-bordea

Proceedings of the 53rd European Microwave Conference Developments in Ray Tracing & the 6th Generation Radar Sensor Model Hasan Iqbal, Sreehari Buddappagari, Sandro Reith, Thomas Breitenberger Continental ADC Automotive Distance Control Systems GmbH, Germany hasan.iqbal-continental-corporation.com Abstract ? The virtual validation of sensors is a key enabler for highly autonomous driving and as

Proceedings of the 53rd European Microwave Conference Millimeter-Wave Ferrite Components Operating in Rectangular Waveguide Bands from 25 to 400 GHz David Porterfield Micro Harmonics Corporation, USA David48-mhc1.com Abstract ? One of the largest obstacles to realizing the next generation of mm-wave and terahertz systems is a lack of suitable component technology. Micro Harmonics is helping to a